Synthesis and oxygen reactive ion etching of novolac-siloxane block copolymers

Jurek, M. J.; Tarascon, R. G.; Reichmanis, Elsa

doi:10.1021/cm00003a009

Cited by 6 publications

(4 citation statements)

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“…the utilisation of the desirable features of each type of block) has led to a number of lithographic studies of thermodynamically incompatible block copolymers. [80][81][82][83][84] The first study of microscopically phaseseparated silicon-containing polymers for lithographic purposes was reported by Hartney and Novembre.…”

Section: Phase-separated Block and Graft Copolymersmentioning

confidence: 99%

Polymeric silicon‐containing resist materials

Miller

Wallraff

1994

Adv Material for Optics Elec

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Silicon-containing bilayer and trilayer photoresist technology is reviewed. Multilayer resist processes of this type rely on pattern generation in a thin imaging layer followed by pattern transfer to the thick planarising underlayer by oxygen reactive ion etching (RIE). The review concentrates on materials in which the silicon is an integral part of the polymer and does not specifically address photoresists where silicon is incorporated in a post-imaging process step (such as top-surface-imaging resists). The review is not exhaustive but emphasizes instead specific examples of representative resist chemistry.

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Section: Phase-separated Block and Graft Copolymersmentioning

confidence: 99%

Polymeric silicon‐containing resist materials

Miller

Wallraff

1994

Adv Material for Optics Elec

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“…Dry etching of organosilicon films has been studied in the past, aiming for potential applications in bilayer lithography [10][11][12]. Specifically, these siloxane polymer thin films can form SiO 2 surface layers that are resistant to O 2 reactive ion etching, thus serving as hard masks for pattern transfer.…”

Section: Introductionmentioning

confidence: 99%

Remote plasma enhanced cyclic etching of a cyclosiloxane polymer thin film

Wang,

Luo,

et al. 2024

Int. J. Extrem. Manuf.

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The continuous evolution of chip manufacturing demands the development of materials with ultra-low dielectric constants. With advantageous dielectric and mechanical properties, initiated chemical vapor deposited (iCVD) poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) emerges as a promising candidate. However, previous works have not explored etching for this cyclosiloxane polymer thin film, which is indispensable for potential applications to the back-end-of-line fabrication. Here, we developed an etching process utilizing O2/Ar remote plasma for cyclic removal of iCVD pV3D3 thin film at sub-nanometer scale. We employed in-situ quartz crystal microbalance to investigate the process parameters including the plasma power, plasma duration and O2 flow rate. X-ray photoelectron spectroscopy and cross-sectional microscopy reveal the formation of an oxidized skin layer during the etching process. This skin layer further substantiates an etching mechanism driven by surface oxidation and sputtering. Additionally, this oxidized skin layer leads to improved elastic modulus and hardness and acts as a barrier layer for protecting the bottom cyclosiloxane polymer from further oxidation.

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“…They also reported that the selective modification of a hydrophilic segment of polystyrene- block -poly(ethylene oxide) (PS- b -PEO) with SiCl 4 or TiCl 4 leads to the formation of SiO 2 or TiO 2 nanodot arrays . Silicon-containing block copolymers were also investigated by taking advantage of the contrast in chemical reactivity between the polymer segments. − Chan et al reported the conversion of a silicon containing triblock copolymer film to a three-dimensional nanostructured silicon oxycarbide ceramic . Nanoporous polymer materials were fabricated by selectively removing the silicon-containing block from a bulk block copolymer …”

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confidence: 99%

“…5 Silicon-containing block copolymers were also investigated by taking advantage of the contrast in chemical reactivity between the polymer segments. [6][7][8] Chan et al reported the conversion of a silicon containing triblock copolymer film to a three-dimensional nanostructured silicon oxycarbide ceramic. 6 Nanoporous polymer materials were fabricated by selectively removing the silicon-containing block from a bulk block copolymer.…”

mentioning

confidence: 99%