Synthesis and optimization solid-state order using side-chain position of thieno-isoindigo derivative-based D–A polymers for high-performance ambipolar organic thin films transistors

Zhang, Guobing; Chen, Junhui; Dai, Yanrong; Song, Sungwon; Ye, Zhiwei; Lu, Hongbo; Qiu, Longzhen; Cho, Kilwon

doi:10.1016/j.dyepig.2016.10.017

Cited by 18 publications

(3 citation statements)

References 46 publications

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“…[42] Meanwhile, PTCDI-C13 OTFTs presented slightly decreased mobility with increased t PTCDI-C13 . This is because the recrystallization of PTCDI-C13 grains through the post-annealing process induces the formation of edge-on-orientation crystallites with no apparent difference in morphology of PTCDI-C13 throughout the film thickness, [43,44] while only increases the distance from source-to-channel in thicker film, which causes higher contact resistance (R C ). [45][46][47] Figure 1g-i shows the transfer characteristics, and Figure 1j represents corresponding transconductance (g m ) profiles of the three H-TRs with three t DNTT / t PTCDI-C13 values: 75 nm / 45 nm (H-TR1), 75 nm / 15 nm (H-TR2), and 25 nm / 45 nm (H-TR3).…”

Section: Resultsmentioning

confidence: 99%

Systematic Control of Negative Transconductance in Organic Heterojunction Transistor for High‐Performance, Low‐Power Flexible Ternary Logic Circuits

Lee

Choi

Park

et al. 2021

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In this context, organic thin-film transistors (OTFTs) have been considered as one of the most promising building blocks for next-generation electronics owing to their light-weight, [4] large-area processability, [5] and inherent flexible nature. [6] With the numerous efforts in last two decades, OTFTs-based integrated circuits have been developed widely in low-end applications such as radio frequency identification (RFID) tags, [7] sensors, [8] and high-gain inverters for amplifiers. [9,10] However, further enhancement toward large-scale integrated circuits have been challenging as lithography-based fine patterning have been limited due to the low stability of organic semiconductors against high temperatures and various solvents. [11] Multi-valued logic (MVL) can be an important approach to conquer this downscaling issue. The enhanced data processing efficiency based on additional logic states in the new computing system displays a significant potential for increasing the integration density. [12,13] For example, the interconnect lines can be reduced by nearly 45% in a ternary logic system compared to that in the conventional binary logic system. [14] Ternary logic devices can be implemented by employing heterojunction transistors (H-TRs). The H-TRs have p-and n-type semiconductors with a partial junction of each semiconductor in contact with only one of the source and drain. This results in a negative transconductance (NTC), which is represented as a "flipped V"-shaped transfer characteristic. [15,16] The biggest advantage of this approach is that an MVL circuit can be achieved by replacing a transistor with an H-TR in a conventional inverter circuit design. This enables three-state logic operation without increasing the required number of transistors of the conventional binary logic circuit. Several ternary logic inverters (T-inverters) based on H-TRs have been proposed using various new materials including transition metal dichalcogenides (TMDs), [17][18][19][20][21][22][23][24][25] graphene, [26,27] organic semiconductors, [28,29] and hybrid material combinations. [30][31][32] Notwithstanding the successful demonstration of T-inverters, the antiambipolar characteristics of H-TRs that display a substantially low on/off current ratio (I on /I off ) hindered the full-swing of the Organic multi-valued logic (MVL) circuits can substantially improve the data processing efficiency in highly advanced wearable electronics. Organic ternary logic circuits can be implemented by utilizing the negative transconductance (NTC) of heterojunction transistors (H-TRs). To achieve high-performance organic ternary logic circuits, the range of NTC in H-TRs must be optimized in advance to ensure the well-defined intermediate logic state in ternary logic inverters (T-inverters). Herein, a simple and efficient strategy, which enables the systematic control of the range and position of NTC in H-TRs is presented. Each thickness of p-/n-type semiconductor in H-TRs is adjusted to control the channel conductivity. Furthermore, asymmetric ...

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Section: Resultsmentioning

confidence: 99%

Systematic Control of Negative Transconductance in Organic Heterojunction Transistor for High‐Performance, Low‐Power Flexible Ternary Logic Circuits

Lee

Choi

Park

et al. 2021

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“…3d). The PTCDI-C13 required an annealing process ( T A = 200 °C) for the formation of edge-on-orientation crystallites, which offer better electrical characteristics 35,36 . The dependence of the crystalline structure of PTCDI-C13 on the annealing temperature ( T A ) is shown in Supplementary Fig.…”

Section: Resultsmentioning

confidence: 99%

Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects

et al. 2019

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Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional integrated circuits require a large number of vertical interconnects between layers. Here, we present a novel multilevel metal interconnect scheme that involves solvent-free patterning of insulator layers to form an interconnecting area that ensures a reliable electrical connection between two metals in different layers. Using a highly reliable interconnect method, the highest stacked organic transistors to date, a three-dimensional organic integrated circuits consisting of 5 transistors and 20 metal layers, is successfully fabricated in a solvent-free manner. All transistors exhibit outstanding device characteristics, including a high on/off current ratio of ~10 7 , no hysteresis behavior, and excellent device-to-device uniformity. We also demonstrate two vertically-stacked complementary inverter circuits that use transistors on 4 different floors. All circuits show superb inverter characteristics with a 100% output voltage swing and gain up to 35 V per V.

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“…The steric effects from neighboring co‐repeat units were mitigated because of the 7‐position of nitrogen atoms, inducing a highly planar polymer backbone 29 . A minimal change in side‐chain positions of thieno‐IID remarkably affected the planar structure, π‐stacking orientation of the polymers, and therefore altered the charge transport performance of transistor devices 30 . Chemically blending strongly electron‐deficient units bis(2‐oxoindolin‐3‐ylidene)benzodifurandione (BIBDF) with low content could optimize the film structure, improving the transistor performance based on IID conjugated polymers 31 .…”

Section: Isoindigo (Iid) Based Ofetsmentioning

confidence: 99%

Ambipolar polymers for transistor applications

Zhu

Zhang

Zhou

et al. 2020

Polymer International

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In this mini‐review, we mainly discuss recent progress in polymeric semiconductors for ambipolar organic field‐effect transistors. The relationship between the device performance and the thin film microstructure, the molecular design as well as the processing conditions has been exemplified by several popular polymers such as diketopyrrolopyrrole, isoindigo and pyridal[2,1,3]thiadiazole, which will be reviewed and described. The thin film microstructure, the molecular design as well as the processing conditions have significantly influenced the performances of the devices. © 2020 Society of Chemical Industry

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Synthesis and optimization solid-state order using side-chain position of thieno-isoindigo derivative-based D–A polymers for high-performance ambipolar organic thin films transistors

Cited by 18 publications

References 46 publications

Systematic Control of Negative Transconductance in Organic Heterojunction Transistor for High‐Performance, Low‐Power Flexible Ternary Logic Circuits

Systematic Control of Negative Transconductance in Organic Heterojunction Transistor for High‐Performance, Low‐Power Flexible Ternary Logic Circuits

Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects

Ambipolar polymers for transistor applications

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