Synthesis and optical characterization of nickel doped zinc sulphide without capping agent

Vadiraj, K.T.; Belagali, S. L.

doi:10.1007/s10854-015-4105-x

Cited by 11 publications

(7 citation statements)

References 9 publications

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“…Experimentally, the doping concentration of Ni was 3%. Further details can be found in [7]). The structural characterization and phase identification are carried out by: x-ray diffractometry (XRD), high resolution transmission electron microscopy (HR-TEM), and x-ray photoelectron spectroscopy (XPS) techniques.…”

Section: Methodsmentioning

confidence: 99%

“…The structural properties of ZnS are easily to be tailored by means of reducing their dimensions or generating chemical modifications. The ZnS can be designed in several dimensions, ranging from 3D, 2D, 1D structures to 0D structure of quantum dots, where the drastic reduction in the material size change their band structure (the band gap increases as the particle size decreases, with this edge of band splits and create discrete energy levels) [6,7]. On the other hand, the doping of ZnS, has been extensively performed in the last decades determining that the impurity plays a very important role in the efficiency and position of the emission bands [8].…”

Section: Introductionmentioning

confidence: 99%

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First principles calculations and experimental study of the optical properties of Ni-doped ZnS

Rodríguez

Zandalazini

Navarro

et al. 2019

Mater. Res. Express

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Zinc sulphide doped with nickel (Ni:ZnS) has many applications in different fields like materials science, electronics, optics, and other industrial applications. Experimentally, a large variety of methods have been developed for Ni:ZnS synthesizing, where the chemical synthesis with capping agent is most successful, but has disadvantages like purity and the low performance. In addition, since there is not also much theoretical information about its features, the electronic and optical response of Ni:ZnS were studied, both experimentally by x-ray diffractometry (XRD), transmission electron microscopy (HR-TEM), and x-ray photoelectron spectroscopy (XPS) and theoretically by means of the density functional theory (DFT) calculations, giving an unified understanding of the electrooptical performance of this compound. In the same way, the importance of the inclusion of Ni impurities in the structure was studied and analyzed by the inclusion of a Hubbard potential in the calculations. We found that the optimal U value for Ni atoms is 4 eV in agreement with experimental results obtained by XPS. The dielectric function (ε 2 ) for pure and doped systems showed that the influence of the Ni atom is mainly given in the range of low energy regions (E<6 eV), where the new peaks are associated to transitions that include the impurity band states.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First principles calculations and experimental study of the optical properties of Ni-doped ZnS

Rodríguez

Zandalazini

Navarro

et al. 2019

Mater. Res. Express

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“…1). This equation describes the particle size in radius as a function of peak absorbance wave length for AgNps 13 .…”

Section: Resultsmentioning

confidence: 99%

Green Synthesis of Silver Nanoparticles Using Tabebuia Aurea Leaf Extract

Prathibha¹,

Priya²

2017

IOSR JAC

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“…The bandgaps of the prepared samples were calculated from the absorption (αhυ) 2 wavelength (hυ) graph and then extrapolating the straight portion of the curve on the energy gap axis. The bandgap calculated for undoped ZnS was 3.87 eV which is quite higher compared to its bulk counterpart having 3.7 eV.…”

Section: The Bandgaps Of the Filmsmentioning

confidence: 99%

“…Transition metals (such as nickel (Ni), manganese (Mn), iron (Fe), copper (Cu), and Cobalt (Co)) doped with semiconducting materials have drawn a great interest as they integrate optical and structural properties into a single material for applications in non-volatile memory, magneto-optical, spintronic and optoelectronic devices [1]. Doping of optically active material alters the electronic structure and transition probability of the host nanostructure and shows new varieties of emissions in different wavelengths [2]. Doping is enhanced by concentration, type of impurity, and crystal dimension.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Studies of Synthesized Semiconductor NixZn1-xS Nanostructure Thin Films for Optoelectronic Device Applications

2022

Nano Plus: Sci. Tech. Nanomat.

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Transition metal ions like Nickel doped Zinc Sulphide semiconductor materials have a wide range of optoelectronic device applications. However, the doping concentration effect on the properties of Ni x Zn 1-x S has not been reported. This study, therefore, investigated the effects of nickel (Ni) doping concentration on the structural and optical properties of synthesized Ni x Zn 1-x S nanostructured thin films prepared by low-cost Chemical Spray Pyrolysis (CSP) technique. Ni x Zn 1-x S nanostructured thin films with a thickness of 320nm and different mole ratios (ϰ = 0.00, 0.02, 0.04, 0.06 and 0.08,) were grown by the use of spray solution on hot glass substrates at a temperature of 300 o C using CSP technique. The spray solutions contain nickel acetate, zinc acetate, and thiourea as precursors for Nickel, Zinc, and Sulphur, respectively. The influences of Ni doping concentration on the structural, optical, and morphological properties were investigated using X-ray diffraction (XRD), Ultraviolet-Visible spectroscopy (UV-Vis), and Scanning Electron Microscopy (SEM) respectively. The XRD analysis indicated that all the prepared films retained the ZnS cubic zinc blend structure. SEM results show that the films are composed of well crystalline grains with various shapes and densely bound to each other. The UV-Vis spectroscopy shows that transmittance is moderately high and increased with increasing Ni content. The average transmittance of Ni x Zn 1-x S are 61.3, 62.8, 63.9, 67.6 and 69.6 % for x = 0.00, 0.02, 0.04, 0.06 and 0.08, respectively. The bandgap of Ni-doped ZnS samples is narrow compared to the undoped and the value increases gradually with increasing Ni concentration. Based on the results obtained, with the enhanced structural and optical properties, Ni x Zn 1-x S films could be useful materials for optoelectronic applications.

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Synthesis and optical characterization of nickel doped zinc sulphide without capping agent

Cited by 11 publications

References 9 publications

First principles calculations and experimental study of the optical properties of Ni-doped ZnS

First principles calculations and experimental study of the optical properties of Ni-doped ZnS

Green Synthesis of Silver Nanoparticles Using Tabebuia Aurea Leaf Extract

Structural and Optical Studies of Synthesized Semiconductor NixZn1-xS Nanostructure Thin Films for Optoelectronic Device Applications

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