Single crystals of oxygen-incorporated ZnS (i.e., ZnS
(1–
x
)
O
x
series) are environment-friendly wide-band-gap semiconductors available
for light-emitting devices and solar cell use. The series of materials
has considerable potential for use in visible ultraviolet areas with
flexibility for palette emissions. In this study, we grow oxygen-incorporated
ZnS series crystals by chemical vapor transport method with iodine
(I
2
) as the transport agent. Three different oxygen-incorporated
crystals of undoped ZnS, ZnS
0.94
O
0.06
, and ZnS
0.88
O
0.12
are studied. Through structural studies,
ZnS doped with oxygen crystallizes in the main sphalerite phase and
a little wurtzite structure. The lattice constants of the major cubic
phase are determined to be
a
= 5.43 Å (ZnS),
5.41 Å (ZnS
0.94
O
0.06
), and 5.39 Å
(ZnS
0.88
O
0.12
). Three band-edge excitonic transitions
are simultaneously detected by thermoreflectance measurement for the
ZnS, ZnS
0.94
O
0.06
, and ZnS
0.88
O
0.12
series samples. The energy positions of the band-edge
transitions decrease as the oxygen content increases in the ZnS
(1–
x
)
O
x
series. Defect-state and surface-state emissions, including sulfur
vacancy, oxygen vacancy, zinc interstitial, and so forth, can emit
approximately full-color spectra from the near band edge of the ZnS
(1–
x
)
O
x
series crystals. With adjusting the oxygen content, the ZnS
(1–
x
)
O
x
can be a series of color-palette luminescence matters that applied
for fluorescent display or light-emitting device.