Four ultrahigh energy gap organosilicon compounds [diphenyldi(o-tolyl)silane (UGH1),
p-bis(triphenylsilyl)benzene (UGH2), m-bis(triphenylsilyl)benzene (UGH3), and 9,9‘-spirobisilaanthracene (UGH4)] were employed as host materials in the emissive layer of
electrophosphorescent organic light-emitting diodes (OLEDs). The high singlet (∼4.5 eV)
and triplet (∼3.5 eV) energies associated with these materials effectively suppress both the
electron and energy transfer quenching pathways between the emissive dopant and the host
material, leading to deep blue phosphorescent devices with high (∼10%) external quantum
efficiencies. Furthermore, by direct charge injection from the adjacent hole and electron
transport layers onto the phosphor doped into the UGH matrix, exciton formation occurs
directly on the dopant, thereby eliminating exchange energy losses characteristic of guest−host energy transfer. We discuss the material design, and present device data for OLEDs
employing UGHs. Among the four host materials, UGH2 and UGH3 have higher quantum
efficiencies than UGH1 when used in OLEDs. Rapid device degradation was observed for
the UGH4-based device due to electro- and/or photooxidation of the diphenylmethane moiety
in UGH4. In addition to showing that UGH materials can be used to fabricate efficient blue
OLEDs, we demonstrate that very high device efficiencies can be achieved in structures
where the dopant transports both charge and excitons.