Synthesis and microstructure of NiTe2

Monteiro, João Frederico Haas Leandro; Marciniak, Mariana Braga; Jurelo, Alcione Roberto; Siqueira, Ezequiel Costa; Dias, F.T.; Júnior, Jorge Luiz Pimentel

doi:10.1016/j.jcrysgro.2017.08.030

Cited by 11 publications

(8 citation statements)

References 9 publications

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“…In contrast, NiTe 2 has been predicted to host type-II Dirac fermions in vicinity of the Fermi energy [37]. The so far performed experimental studies on NiTe 2 have primarily focused on its crystal structure, and transport properties while its topological band structure remains unexplored [37][38][39][40][41][42][43][44]. Motivated by this, we explored the electronic band structure of NiTe 2 by means of spin-and angle-resolved photoemission spectroscopy (ARPES) in combination with density functional theory (DFT).…”

mentioning

confidence: 99%

Observation of bulk states and spin-polarized topological surface states in transition metal dichalcogenide Dirac semimetal candidate NiTe2

et al. 2019

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Using spin-and angle-resolved photoemission spectroscopy (spin-ARPES) together with ab initio calculations, we demonstrate the existence of a type-II Dirac semimetal state in NiTe2. We show that, unlike PtTe2, PtSe2, and PdTe2, the Dirac node in NiTe2 is located in close vicinity of the Fermi energy. Additionally, NiTe2 also hosts a pair of band inversions below the Fermi level along the Γ − A high-symmetry direction, with one of them leading to a Dirac cone in the surface states. The bulk Dirac nodes and the ladder of band inversions in NiTe2 support unique topological surface states with chiral spin texture over a wide range of energies. Our work paves the way for the exploitation of the low-energy type-II Dirac fermions in NiTe2 in the fields of spintronics, THz plasmonics and ultrafast optoelectronics.

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confidence: 99%

Observation of bulk states and spin-polarized topological surface states in transition metal dichalcogenide Dirac semimetal candidate NiTe2

et al. 2019

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“…Additionally, superconductivity was observed in NiTe 2 under pressure [53] and with the intercalation of Ti into the van der Waals gap (the space between two adjacent chalcogenide layers) [50], and was also predicted in atomically thin systems [54]. Moreover, the energy position of its Dirac node, closer to the Fermi level when compared with similar systems [42,55,56], combined with accessible high-quality single crystals [57][58][59] substantiate the interest on the material.…”

Section: Introductionmentioning

confidence: 52%

Strain engineering the topological type-II Dirac semimetal NiTe2

et al. 2021

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In the present work, we investigate the electronic and elastic properties in equilibrium and under strain of the type-II Dirac semimetal NiTe 2 using density functional theory. Our results demonstrate the tunability of Dirac nodes' energy and momentum with strain and that it is possible to bring them closer to the Fermi level, while other metallic bands are suppressed. We also derive a minimal 4-band effective model for the Dirac cones, which accounts for the aforementioned strain effects by means of lattice regularization, providing an inexpensive way for further theoretical investigations and easy comparison with experiments. On an equal footing, we propose the static control of the electronic structure by intercalating alkali species into the van der Waals gap, resulting in the same effects obtained by strain engineering and removing the requirement of in situ strain. Finally, evaluating the wave-function's symmetry evolution as the lattice is deformed, we discuss possible consequences, such as Liftshitz transitions and the coexistence of type-I and type-II Dirac cones, thus motivating future investigations.

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“…Despite the problem of the lattice mis-match between available substrates and the TMD epilayers there are numerous reports of successful epitaxial growth of various 2D materials using chemical methods, such as Chemical Vapour Deposition (CVD) [23,24], and physical methods, such as Molecular Beam Epitaxy (MBE) [22,[25][26][27][28][29][30]. The crystals of NiTe 2 have been produced so far only by the chemical ones including several bulk growths realizations [31][32][33][34][35]. Thin films of NiTe 2 were successfully grown by CVD on SiO 2 [36] where the precise thickness control was reported for lateral dimension up to hundreds of micrometers.…”

Section: Introductionmentioning

confidence: 99%

Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$

Seredyński,

Ogorzałek,

Zajkowska

et al. 2021

Preprint

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The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe2 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearly lattice matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunnelling microscopy. Surface coverage and atomic scale order is evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that NiTe2 layers are metallic, with the Hall concentration of 10 20 cm −3 to 10 23 cm −3 , depending on the growth conditions.

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Synthesis and microstructure of NiTe2

Cited by 11 publications

References 9 publications

Observation of bulk states and spin-polarized topological surface states in transition metal dichalcogenide Dirac semimetal candidate NiTe2

Observation of bulk states and spin-polarized topological surface states in transition metal dichalcogenide Dirac semimetal candidate NiTe2

Strain engineering the topological type-II Dirac semimetal NiTe2

Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$

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