Synthesis and melting behaviour of Bi, Sn and Sn–Bi nanostructured alloy

Frongia, Francesca; Pilloni, Martina; Scano, Alessandra; Ardu, Andrea; Cannas, Carla; Musinu, Anna Maria Giovanna; Borzone, G.; Delsante, S.; Novaković, R.; Ennas, Guido

doi:10.1016/j.jallcom.2014.08.122

Cited by 50 publications

(22 citation statements)

References 35 publications

(54 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Bismuth has significant solid solubility (21.0 wt.%Bi) in Sn at the eutectic temperature so that Bi precipitates in the Sn-rich phase by solid-state precipitation at low temperature. Other investigations [19][20][21][22] report that the eutectic composition of the Bi-Sn system falls at 43 wt.%Sn. Glazer [11] outlines the Bi-Sn eutectic as being lamellar with degenerate material at the boundaries of the eutectic grains (regions of lamellar alignment) for moderate cooling rates.…”

Section: Introductionmentioning

confidence: 99%

Microstructural development and mechanical properties of a near-eutectic directionally solidified Sn–Bi solder alloy

Silva

Reinhart

Nguyen-Thi

et al. 2015

Materials Characterization

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Microstructural development and mechanical properties of a near-eutectic directionally solidified Sn–Bi solder alloy

Silva

Reinhart

Nguyen-Thi

et al. 2015

Materials Characterization

View full text Add to dashboard Cite

“…In this section, we show how low melting temperature solders, consisting of various elements with higher melting temperatures, such as Sn (melting point of 231.9°C), In (melting point of 156.6°C), and Bi (melting point of 271.5°C), can be fabricated and/or synthesized using metallurgy principles or nanotechnology theory [8]. For example, the formation of an eutectic alloy with 42 wt.% Sn and 58 wt.% Bi can lead to a melting point decrease to 138°C due to the shift to the eutectic temperature [3,4].…”

Section: Syntheses And/or Fabrications Of Low Melting Temperature Solmentioning

confidence: 99%

Low Melting Temperature Solder Materials for Use in Flexible Microelectronic Packaging Applications

Kim¹,

Yang²

2017

Recent Progress in Soldering Materials

View full text Add to dashboard Cite

The increasing application of heat-sensitive microelectronic components such as a multitude of transistors, polymer-based microchips, and so on, and flexible polymer substrates including polyethylene terephthalate (PET) and polyimide (PI), among others, for use in wearable devices has led to the development of more advanced, low melting temperature solders (<150°C) for interconnecting components in various applications. However, the current low melting temperature solders face several key challenges, which include more intermetallic compound formation (thus become more brittle), cost issues according to the addition of supplementary elements to decrease the melting point temperature, an increase in the possibility of thermal or popcorn cracking (reliability problems), and so on. Furthermore, the low melting temperature solders are still required to possess rapid electronic/electrical transport ability (high electrical conductivity and current density) and accompany strong mechanical strength sustaining the heavy-uploaded microelectronic devices on the plastic substrates, which are at least those of the conventional melting temperature solders (180-230°C). Thus, the pursuit of more advanced low melting temperature solders for interconnections is timely. This review is devoted to the research on three methods to improve the current properties (i.e., electrical and thermomechanical properties) of low melting temperature solders: (i) doping with a small amount of certain additives, (ii) alloying with a large amount of certain additives, and (iii) reinforcing with metal, carbon, or ceramic materials. In this review, we also summarize the overall recent progress in low melting temperature solders and present a critical overview of the basis of microscopic analysis with regard to grain size and solid solutions, electrical conductivity by supplementation with conductive additives, thermal behavior (melting point and melting range) according to surface oxidation and intermetallic compound formation, and various mechanical properties.

show abstract

“…271 8C) and depression of the meltingp oint duet ot he high surface-to-volume ratios in the nanoscale region. [16] Although numerous studies have been reported on deposition of various metals within mesoporous silica, the formation of such non-crystalline metals within mesoporous silica is quite rare.…”

Section: Characterization Of Bundles Of Bi-nw(y) (Nw: Nanowiresy: Mementioning

confidence: 99%

Usefulness of Mesoporous Silica as a Template for the Preparation of Bundles of Bi Nanowires with Precisely Controlled Diameter Below 10 nm

Kitahara

Kamila

Shimojima

et al. 2016

Chemistry An Asian Journal

View full text Add to dashboard Cite

The reduction of the diameter of Bi nanowires below 10 nm has been an important target because of the theoretical prediction with regard to significant enhancement in thermoelectric performance by size reduction. In this study, we have demonstrated the usefulness of mesoporous silica with tunable pore size as a template for the preparation of thin Bi nanowires with diameters below 10 nm. Bi was deposited within the templates through a liquid phase deposition using hexane and 1,1,3,3-tetramethyldisiloxane as a solvent and reducing agent, respectively. Bundles of thin Bi nanowires with non-crystalline frameworks were successfully obtained after the template removal. The diameter was precisely controlled between about 6 nm and 9 nm. The judicious choices of mesoporous silica and deposition conditions are critical for the successful preparation. The reliable formation of such thin Bi nanowires reported here opens up exciting new possibilities.

show abstract

Synthesis and melting behaviour of Bi, Sn and Sn–Bi nanostructured alloy

Cited by 50 publications

References 35 publications

Microstructural development and mechanical properties of a near-eutectic directionally solidified Sn–Bi solder alloy

Microstructural development and mechanical properties of a near-eutectic directionally solidified Sn–Bi solder alloy

Low Melting Temperature Solder Materials for Use in Flexible Microelectronic Packaging Applications

Usefulness of Mesoporous Silica as a Template for the Preparation of Bundles of Bi Nanowires with Precisely Controlled Diameter Below 10 nm

Contact Info

Product

Resources

About