Synthesis and magnetotransport properties of nanocrystalline graphite prepared by aerosol assisted chemical vapor deposition

Dual functional reduced graphene oxide as photoanode and counter electrode in dye-sensitized solar cells and its exceptional efficiency enhancement

“…Moreover, it provides a greater capability and flexibility than conventional CVD because of its simple and good control of the transport of the precursor to the deposition zone [14]. AACVD is able to obtain high-quality homogenous thin films with a strong adherence to the substrate [15].…”

Atomic scale investigations of catalyst and catalytic graphitization in a silicon and titanium doped graphite

“…Graphite with a distinctive crystal structure possesses various unique properties and engages extensive applications in the technological society [1][2][3][4]. It is well accepted that these special properties, especially high thermal and electrical conductivities in the ab directions, largely depend on the degree of graphitization of the graphitic materials [5,6].…”

Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix

“…. 8 × 10 −5 Ωm) [20]. From experiments it is known that the resistivity ratio between the in-plane (ρ a ) and out-ofplane (ρ c ) resistivity in graphite is in the order of ρ c /ρ a ≈ 10 3 − 10 4 [30,33], indicating that the transport in our sample is dominated by the in-plane resistivity.…”

“…The observed temperature dependence is clearly different from the one we obtained after the first annealing treatment. The resistance ratio R A2 (2K)/R A2 (315K) ≈ 1.275 is one order of magnitude smaller than the one after the first annealing, and of the same order as for nano-graphite films [20] and few layer graphene films [21,22]. The current-voltage curves after second annealing are linear in all measured temperature range and are shown in the supplementary information.…”

“…R 0 a residual temperature independent resistance that we include in the metalliclike contribution only, provides a saturation of the resistance at low temperatures. The contribution R m (T ) was already used to explain the temperature dependence of the resistance in bulk graphite [24], few layer graphene samples [22,25] and nano-graphite thin films [20]. Its origin is related to certain interfaces formed between the graphite crystallites.…”