Synthesis and luminescence properties of electrodeposited ZnO films

Manzano, Cristina V.; Alegre, D.; Caballero‐Calero, Olga; Alén, Benito; Martín‐González, Marisol

doi:10.1063/1.3622627

Cited by 76 publications

(57 citation statements)

References 54 publications

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“…The infrared (IR) emission band located at 765 nm is attributed, according to Manzano et al, 53 to transition from oxygen interstitial (O i ) and oxygen anti-site (O Zn ) defects to the valence band. According to Yang, 54 the thermal annealing could be responsible for O Zn defects following the reaction:…”

Section: Resultsmentioning

confidence: 99%

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Bouanane

Kabir

Boulainine

et al. 2016

Journal of Elec Materi

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Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

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Section: Resultsmentioning

confidence: 99%

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Bouanane

Kabir

Boulainine

et al. 2016

Journal of Elec Materi

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“…Previous reports indicate that the radiative lifetime of ex-citons pure ZnO is in the nanosecond range, while in the visible range the lifetime of the emission is longer, i.e., in the range of microseconds, so this justifies the emission is stronger in the visible (Das and Mondal, 2014). However, the complex dependence of UV and visible emission intensities is still subject of controversy in the literature (Mohanta, 2014;Manzano et al, 2011;Khan et al, 2013).…”

Section: Resultsmentioning

confidence: 85%

Optical and Structure Analysis of ZnO:Al Film

Trindade¹,

Chaves²,

Bortoleto³

et al. 2017

American Journal of Engineering and Applied Sciences

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ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation in the plane (002) is observed in the doped samples. The Al incorporated films exhibited optical transmittance above 80% in the visible spectrum and a clear absorption band in the infrared due to free carriers. Additionally, the optical band gap around 3.48 eV is significantly above the values for the intrinsic ZnO (3.25 eV). Photoluminescence (PL) measurements showed a broad emission band in the visible region. In addition, PL emission lines at 3.32 and 3.37 eV showed up in Al incorporated films, and were related to excitonic emissions. The results show that the Burstein-Moss effect plays a central role in determining the optical characteristics of the doped material.

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“…Similar bands are commonly observed in solution-processed ZnO nanoparticles and nanowires. 18,33 Our experimental results show that when increasing the doping concentration, the relative intensity of the broad visible band decreases with respect to the UV emission band (Figure 2a and c). The doping concentration affected the two main visible contributions, yellow and orange, in a similar way.…”

mentioning

confidence: 89%

“…Nevertheless, a lack of consensus on important optical properties, such as the origin of its visible photoluminescence (PL) emission, still exists. 4−6 The various contributions to the visible emission has been associated with oxygen vacancies, 7−14 oxygen antisites, oxygen interstitial, 15,16 zinc vacancy, 17−20 zinc interstitials, 21,22 trapped OH − groups, 18 and even Cu impurities. 23 On the other hand, evidence exists that the intensity of some contributions to the visible emission band depends on the material surface-to-bulk ratio.…”

Section: Introductionmentioning

confidence: 99%

Visible Photoluminescence Components of Solution-Grown ZnO Nanowires: Influence of the Surface Depletion Layer

et al. 2012

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Arrays of electrodeposited ZnO nanowires (NWs) were used to illustrate the dependence of the ZnO visible photoluminescence (PL) emission on the extension of the surface depletion layer and obtain further insight into the localization of the related states. With this goal in mind, three sets of measurements were carried out: (i) analysis of the PL spectra of ZnO:Cl NWs as a function of their carrier concentration; (ii) analysis of the PL spectra of ZnO:Cl/ZnO core−shell NWs as a function of the thickness of their intrinsic ZnO shell; (iii) in situ analysis of the PL dependence on the polarization of ZnO:Cl photoelectrodes. The obtained experimental results evidenced that the yellow and orange emissions from electrodeposited ZnO NWs are correlated with the extension of the NWs surface depletion region. This result points out the surface localization of the states at the origin of these transitions. On the other hand, the green emission that dominates the visible part of the PL spectra in annealed ZnO NWs showed no dependence on the surface band bending, thus pointing toward its origin in the bulk.

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Synthesis and luminescence properties of electrodeposited ZnO films

Cited by 76 publications

References 54 publications

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Optical and Structure Analysis of ZnO:Al Film

Visible Photoluminescence Components of Solution-Grown ZnO Nanowires: Influence of the Surface Depletion Layer

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