Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

Hao, Shiming; Liu, Pengru; Wu, Haozhan; Wang, Hong; Xie, Jingpei

doi:10.1016/j.ceramint.2023.04.101

Cited by 4 publications

(3 citation statements)

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“…The direct analysis of SiC using Raman spectroscopy concerns two prominent peaks: the transverse optical (TO) and the longitudinal optical (LO) modes. [36][37][38][39][40] High-purity samples exhibit sharp peaks at precise wavelengths to distinguish among polytypes or to get a distribution of all the polytypes within a sample. However, in the case of highly disordered or defect heavy samples like PSZ-derived specimen, Raman spectroscopy may also uncover SF density and distribution.…”

Section: Raman Spectroscopymentioning

confidence: 99%

“…37 By matching the TO peak to its precise location, it is possible to identify the main crystalline polytype of SiC, and 3C is found between 790 and 796 cm −1 . [36][37][38][39][40] Once established, the degree of asymmetry of the peak can be analyzed to further investigate SF density. Figure 2B shows three Raman spectra pertaining to samples PSZ-SiCF1-3.…”

Section: Raman Spectroscopymentioning

confidence: 99%

“…The wavenumbers of all three TO peaks were 792.2, 792.8, and 789.6 cm −1 , respectively, which all appear to match 3C-SiC, despite many polytypes sharing close wavelength values. [36][37][38][39][40] Literature evidence from several authors states that samples with high densities of SFs in 3C-SiC will show large degrees of asymmetry to the low-frequency side of the TO peak. 37 By reviewing the three samples, they all exhibit a significant degree of asymmetry to the low-frequency side, of the TO mode.…”

Section: Raman Spectroscopymentioning

confidence: 99%

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Structure and defect analysis of different polysilazane‐derived silicon carbide systems

Shuster,

Bamonte,

Valus

et al. 2024

J Am Ceram Soc.

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Polysilazane (PSZ) polymers offer the ability to form silicon carbide (SiC) or silicon nitride (Si3N4) via thermal pyrolysis. The majority of studies surrounding this polymer have focused on the decomposition of PSZ to amorphous glass. Investigations into the structural defects and bonding environments of the final ceramic systems are not as frequently discussed. Examining structural defects/abnormalities can help better use PSZ‐derived ceramics in electronic and high‐temperature applications, where phase identity and microstructure are important.In this work, three PSZ‐derived polymers were synthesized with different C/N ratios (1.33, 1.0, and 1.2) via the ammonolysis condensation reaction with chlorinated silanes. The samples were named PSZ‐SiCF1‐3. Samples were then pyrolyzed under Ar in a tube furnace at 1600°C for 5 h. Characterization included X‐ray diffraction (XRD), Raman spectroscopy, X‐ray photoelectron spectroscopy, scanning transmission electron microscopy, and electron energy loss spectroscopy.XRD measurements uncovered arbitrary stacking fault (SF) measurements of 3C‐SiC to be 4.12, 1.08, and 2.12 (unitless) for samples PSZ‐SiCF1‐3. Results were supported through Raman spectroscopy and TEM. High carbon content, not higher residual nitrogen content, was more impactful for SF formation. This highlights the importance of SFs in the microstructural evolution of non‐oxide ceramics.

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