Our system is currently under heavy load due to increased usage. We're actively working on upgrades to improve performance. Thank you for your patience.
2011
DOI: 10.1155/2011/569036
|View full text |Cite
|
Sign up to set email alerts
|

Synthesis and Humidity Sensing Properties of Sn-Doped Nano-TiO2

Abstract: Nanostructured Sn-doped TiO 2 have been prepared by ball milling using SnO 2 and TiO 2 as raw materials. The as-prepared powders are characterized by XRD, SEMs and EDAX to identify the structural phases, surface morphology, and composition of the materials. The materials are prepared with the addition of tin of different molar ratios (0, 0.05, 0.10, 0.15, 0.20, 0.25, and 1.0) to TiO 2 and sintered at 800• C for 3 h. They are subjected to dc resistance measurements as a function of relative humidity (RH) in the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
6
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 14 publications
(7 citation statements)
references
References 11 publications
0
6
0
Order By: Relevance
“…The difference between diameters of lower and upper part can be explained by growth of titanium oxide inside of the barrier layer of alumina cells and inside the free space of pores. Inside the alumina barrier layer during transport of Ti and Al ions mixing of titanium oxide with alumina takes place [ 37 ] and only small channels (about 10 nm) in the center of alumina barrier layer have more pure TiO 2 material. After selective removing of the porous alumina layer the mixed part of TiO 2 is removed simultaneously with the alumina leaving the small diameter lower part of the nanopillars ( Figure 6b ).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The difference between diameters of lower and upper part can be explained by growth of titanium oxide inside of the barrier layer of alumina cells and inside the free space of pores. Inside the alumina barrier layer during transport of Ti and Al ions mixing of titanium oxide with alumina takes place [ 37 ] and only small channels (about 10 nm) in the center of alumina barrier layer have more pure TiO 2 material. After selective removing of the porous alumina layer the mixed part of TiO 2 is removed simultaneously with the alumina leaving the small diameter lower part of the nanopillars ( Figure 6b ).…”
Section: Resultsmentioning
confidence: 99%
“…The advancing development of science in the area of nanoelectronics can significantly reduce the size of such sensors and their power consumption, which opens the possibility of using them as in-situ or wearable sensors, e.g., for human biological processes monitoring [ 23 25 ] close to the skin or vapors, humidity and gases measuring in mobile applications. One of the more promising materials for humidity sensor applications is micro- and nanostructured titanium oxide film, which can be fabricated in the form of nanowires [ 26 , 27 ], nanofibers [ 28 , 29 ], nanocrystalline thin films [ 30 ], nanocomposite thin films [ 31 33 ], microstructures TiO 2 films [ 34 ], titanium oxide nanotubes [ 35 ], nanopowders [ 36 , 37 ], nanocolumns [ 38 ] and nanostructured films produced by glancing angle deposition [ 39 ] or sol-gel [ 30 ] techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Due to its high chemical stability, low dielectric constant, large electromechanical coupling coefficient, and high luminous transmittance, ZnO materials have been widely used as a dielectric ceramic, pigment, catalyst, and sensing material. Besides being a multifunctional material, ZnO has a large exciton binding energy of 60 mV with a hexagonal wurtzite structure (a = 3.249 Å and c = 5.21 Å) . Doping is an effective technique for manipulating various applications of semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…Besides being a multifunctional material, ZnO has a large exciton binding energy of 60 mV with a hexagonal wurtzite structure (a=3.249 A and c=5.21 A). [4][5][6][7][8][9][10] Doping is an effective technique for manipulating various applications of semiconductors. The copper oxide (CuO) is a narrow band gap (1.7 eV) p-type semiconductor material having monoclinic crystal structure 11 and draw much attention since the starting growth material is inexpensive and easy to get, and the methods to prepare these materials are of low cost.…”
Section: Introductionmentioning
confidence: 99%
“…Chemisorption model was used to explain the H 2 sensing mechanism (Benkara et al 2013). Nanostructured Sn-doped TiO 2 has been reported by (Raji et al 2011), which is prepared by ball milling using SnO 2 and TiO 2 as raw materials. This work pointed out that Sn-doped TiO 2 possessed the highest humidity sensitivity, than pristine TiO 2 and SnO 2 .…”
Section: Introductionmentioning
confidence: 99%