“…These values are much higher in comparison to polymer-derived SiCN ceramic. 25,33 Vacuum annealing at 900°C [ Fig. 5(b)] strongly increases hardness of all the films due to atomic short-range ordering.…”
Section: (1) Summary Of Previous Resultsmentioning
confidence: 99%
“…Hardness and elastic modulus measured at 10 mN decreases from ~22.5 to 18.5 GPa and from 295 to 242 GPa for films deposited at N 2 /Ar of 0 and 0.48, respectively. These values are much higher in comparison to polymer‐derived SiCN ceramic . Vacuum annealing at 900°C [Fig.…”
Section: Mechanical Propertiesmentioning
confidence: 99%
“…Taking into account only the composition as a key factor affecting the extraordinary high‐temperature stability of the above‐mentioned films does not allow to draw an explicit conclusion of what is behind the temperature stability in the Si–C–N or Si–B–C–N systems. Not only the particular composition, but also the microstructure are both the crucial parameters affecting the high‐temperature performance . It should be noted that both of them are closely related to peculiarities of the used deposition process.…”
Section: Introductionmentioning
confidence: 99%
“…Not only the particular composition, but also the microstructure are both the crucial parameters affecting the high-temperature performance. 25 It should be noted that both of them are closely related to peculiarities of the used deposition process. Understanding the effect of thermal exposure on structure and mechanical properties of the SiCN films is one of the fundamental steps toward their successful practical application.…”
The effect of thermal annealing on structure and mechanical properties of amorphous SiCxNy (y ≥ 0) thin films was investigated up to 1500°C in air and Ar. The SiCxNy films (2.2–3.4 μm) were deposited by reactive DC magnetron sputtering on Si, Al2O3 and α‐SiC substrates without intentional heating and at 600°C. The SiC target with small excess of carbon was sputtered at various N2/Ar gas flow ratios (0–0.48). The nitrogen content in the films changes in the range 0–43 at.%. Hardness and elastic modulus (nanoindentation), change in film thickness, film composition, and structure (Raman spectroscopy, XRD) were investigated in dependence on annealing temperature and nitrogen content. All SiCxNy films preserve their amorphous structure up to 1500°C. The hardness of all as‐deposited and both air‐ and Ar‐annealed SiCxNy films decreases with growth of nitrogen content. The annealing in Ar at temperatures of 1100°C–1300°C results in noticeable hardness growth despite the ordering of graphite‐like structure in carbon clusters in nitrogen free films. Unlike the SiC, this graphitization leads to hardness saturation of SiCN films starting above 900°C, especially for films with higher nitrogen content (deposited at higher N2/Ar). This indicates the practical hardness limit achievable by thermal treatment for SiCxNy films deposited on unheated substrates. The ordering in carbon phase is facilitated by the presence of nitrogen in the films and its extent is controlled by the N/C atomic ratio. The suppression of graphitization was observed for N/C ranging between 0.5–0.7. Films deposited at 600°C show higher hardness and oxidation resistance after annealing in comparison with those deposited on unheated substrates. Hardness reaches 40 GPa for SiC and ~28 GPa for SiCxNy (35 at.% of nitrogen). Such a high hardness of SiC film stems from its partial crystallization. Annealing of SiCxNy film (35 at.% of N) in Ar at 1400°C is accompanied by formation of numerous hillocks (indicating heterogeneous structure of amorphous films) and redistribution of film material.
“…These values are much higher in comparison to polymer-derived SiCN ceramic. 25,33 Vacuum annealing at 900°C [ Fig. 5(b)] strongly increases hardness of all the films due to atomic short-range ordering.…”
Section: (1) Summary Of Previous Resultsmentioning
confidence: 99%
“…Hardness and elastic modulus measured at 10 mN decreases from ~22.5 to 18.5 GPa and from 295 to 242 GPa for films deposited at N 2 /Ar of 0 and 0.48, respectively. These values are much higher in comparison to polymer‐derived SiCN ceramic . Vacuum annealing at 900°C [Fig.…”
Section: Mechanical Propertiesmentioning
confidence: 99%
“…Taking into account only the composition as a key factor affecting the extraordinary high‐temperature stability of the above‐mentioned films does not allow to draw an explicit conclusion of what is behind the temperature stability in the Si–C–N or Si–B–C–N systems. Not only the particular composition, but also the microstructure are both the crucial parameters affecting the high‐temperature performance . It should be noted that both of them are closely related to peculiarities of the used deposition process.…”
Section: Introductionmentioning
confidence: 99%
“…Not only the particular composition, but also the microstructure are both the crucial parameters affecting the high-temperature performance. 25 It should be noted that both of them are closely related to peculiarities of the used deposition process. Understanding the effect of thermal exposure on structure and mechanical properties of the SiCN films is one of the fundamental steps toward their successful practical application.…”
The effect of thermal annealing on structure and mechanical properties of amorphous SiCxNy (y ≥ 0) thin films was investigated up to 1500°C in air and Ar. The SiCxNy films (2.2–3.4 μm) were deposited by reactive DC magnetron sputtering on Si, Al2O3 and α‐SiC substrates without intentional heating and at 600°C. The SiC target with small excess of carbon was sputtered at various N2/Ar gas flow ratios (0–0.48). The nitrogen content in the films changes in the range 0–43 at.%. Hardness and elastic modulus (nanoindentation), change in film thickness, film composition, and structure (Raman spectroscopy, XRD) were investigated in dependence on annealing temperature and nitrogen content. All SiCxNy films preserve their amorphous structure up to 1500°C. The hardness of all as‐deposited and both air‐ and Ar‐annealed SiCxNy films decreases with growth of nitrogen content. The annealing in Ar at temperatures of 1100°C–1300°C results in noticeable hardness growth despite the ordering of graphite‐like structure in carbon clusters in nitrogen free films. Unlike the SiC, this graphitization leads to hardness saturation of SiCN films starting above 900°C, especially for films with higher nitrogen content (deposited at higher N2/Ar). This indicates the practical hardness limit achievable by thermal treatment for SiCxNy films deposited on unheated substrates. The ordering in carbon phase is facilitated by the presence of nitrogen in the films and its extent is controlled by the N/C atomic ratio. The suppression of graphitization was observed for N/C ranging between 0.5–0.7. Films deposited at 600°C show higher hardness and oxidation resistance after annealing in comparison with those deposited on unheated substrates. Hardness reaches 40 GPa for SiC and ~28 GPa for SiCxNy (35 at.% of nitrogen). Such a high hardness of SiC film stems from its partial crystallization. Annealing of SiCxNy film (35 at.% of N) in Ar at 1400°C is accompanied by formation of numerous hillocks (indicating heterogeneous structure of amorphous films) and redistribution of film material.
“…It shows better oxidation resistance and thermal stability than SiC and Si 3 N 4 . 15,16 Although they are rarely reported as secondary phases for HfC ceramics, in our previous work, SiCN has been found to be beneficial to densify and toughen HfC. 17 However, the previous work was primarily focused on optimizing the composition and morphology of the HfC nanopowders, the exact role of SiCN phase in the densification and microstructure evolution was not clear.…”
Hafnium carbide (HfC) possesses low toughness and damage tolerance, which limits its application as high‐temperature structural materials. Here we report a route to fabricate a dense HfC with high toughness by incorporating a two‐component SiCN (silicon carbonitride) sintering aid, which is composed of SiCN and turbostratic carbon in the spark plasma sintering. The addition of the SiCN not only enhances the density (up to ~97%) of the final product, but more importantly results in an increase in toughness from 4.3 to 8.5 MPa m1/2 with only a 10% reduction in the flexural strength. The improvement has been attributed to the unique microstructure of the obtained samples, exhibiting several important characteristics: (a) homogeneously dispersed SiCN and C secondary phases in the HfC matrix to control grain size; (b) HfC grains contain different levels of Si, O, and N to form solid solution; (c) enrichment of free carbon at grain boundaries and triple junctions.
Polymer‐derived ceramics (PDCs) represent a class of ceramics that are preparatively accessible from inorganic polymers (also called preceramic polymers). The synthesis and processing of PDCs from polymeric precursors have been shown within the past four decades to be an excellent way to design ceramics, which provides unique tools to control and tune structural features and consequently properties in PDCs. Thus, the molecular architecture and the chemistry of the preceramic polymers strongly correlate to the polymer‐to‐ceramic transformation characteristics as well as the structural features of the resulting PDC materials. By carefully designing the preceramic polymer, fine‐tuning of the chemical and phase composition of the resulting ceramics is possible, which results in unique microstructures and behavior thereof.
The present article aims to give a brief introduction to the field of PDCs. Typically, an introduction of preparative tools to access PDCs from tailored inorganic polymers will be done. In addition, a critical consideration of the main structural features of PDCs will be given, with emphasis on the strong correlation between the nano/microstructure of the PDCs and the molecular architecture of their polymeric precursors. Also, various technologies being used to process PDCs in the form of porous materials, coatings, fibers, complex‐shaped monolithic parts, and so on will be introduced and discussed. Finally, some selected structural and functional properties (e.g., high‐temperature behavior, electrical properties, optical properties, and bioactivity) of PDCs will be highlighted and some emerging application fields in which PDCs may be highly suitable material candidates will be introduced.
The present article does not intend to provide an exhaustive review of the activities from the past three to four decades in the field of PDCs, but rather to give a short overview of the particularities and the potential of this technology. The article refers in the section “Related Papers” to some excellent reviews and book chapters from the past 20 years, which address and summarize various aspects related to PDCs.
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