1999
DOI: 10.1016/s0022-0248(98)00882-3
|View full text |Cite
|
Sign up to set email alerts
|

Synthesis and growth of PbTe crystals at low temperature and their characterization

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
10
1
2

Year Published

2005
2005
2019
2019

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 26 publications
(14 citation statements)
references
References 13 publications
0
10
1
2
Order By: Relevance
“…A dislocation density in the range 10 4 -10 5 cm À2 (Fig. 6) was found which is lower than reported elsewhere [19].…”
Section: Structural Studiescontrasting
confidence: 60%
See 1 more Smart Citation
“…A dislocation density in the range 10 4 -10 5 cm À2 (Fig. 6) was found which is lower than reported elsewhere [19].…”
Section: Structural Studiescontrasting
confidence: 60%
“…Different techniques have been used to grow PbTe bulk crystal [5,8,11,[17][18][19]. In this paper we report the growth of p-type PbTe single crystal from the nearly stoichiometric melts by vertical Bridgman method without using any seed.…”
Section: Introductionmentioning
confidence: 99%
“…El PbTe policristalino, se procesa en tubos de silicio (al vacío y perfectamente sellados) que son calentados hasta 1200 K, para asegurar la fusión, y posteriormente se enfría súbitamente el compuesto [1 y 2] . Existen otras técnicas alternativas para la obtención del PbTe, tales como: síntesis hidrotérmica [3] , método Bridgman [4] , procesos al estado sólido [5] , por mencionar algunos.…”
Section: Introductionunclassified
“…En contraste, la producción industrial del PbTe es un proceso muy largo que requiere el uso de elevadas temperaturas y vacío [1 y 2] . De allí que los parámetros de operación que se usan en la SM en condiciones cercanas a las atmosféricas, la convierten en una ruta alterna conveniente para producir materiales termoeléctricos policristalinos [1][2][3][4][5] .…”
Section: Introductionunclassified
“…Among these materials, PbTe with a narrow band gap and high carrier mobility is always one of the research focuses during the past five decades [1]. Many methods have been developed for preparation of PbTe, including chemical vapor deposition [2], electrodeposition [3], molecular beam epitaxy [4], atomic layer epitaxy [5], hot-wall epitaxy [6], vacuum evaporation [7], magnetron sputtering [8], wet chemical synthesis [9,10] and so on.…”
Section: Introductionmentioning
confidence: 99%