Synthesis and formation mechanism of twinned SiC nanowires made by a catalyst-free thermal chemical vapour deposition method

Huang, Zhaohui; Liu, Haitao; Chen, Kai; Fang, Minghao; Huang, Juntong; Liu, Shuyue; Huang, Saifang; Liu, Yangai; Wu, Xiaowen

doi:10.1039/c4ra00073k

Cited by 24 publications

(11 citation statements)

References 36 publications

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“…In this experiment, when maintaining at 1200°C, Si reacts with the limited amount of oxygen remaining in the air in the furnace chamber to form a small amount of solid SiO 2 by the reaction (). At the same time, gaseous SiO is generated by a solid‐solid reaction between Si and SiO 2 (reaction ). The gas phase produced by the raw materials is continuously diffused into the Si/Au eutectic alloy clusters to form the Si‐Au‐N‐O liquid droplets.…”

Section: Resultsmentioning

confidence: 99%

Facile synthesis of α‐Si₃N₄ nanoneedles and their photoluminescence properties

Shen

Liu

Zhang

et al. 2019

Int J Applied Ceramic Tech

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Needle-like α-Si 3 N 4 with unique structures has potential application in both field emission devices and tips for atomic force microscopes. Single-crystalline, α-Si 3 N 4 nanoneedles have been prepared by using an improved chemical vapor deposition (CVD) method at 1200°C for 3 hours. The phases, chemical composition, and microstructure of the as-prepared products were determined by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) equipped with EDS. The as-synthesized products show a needle-like morphology with hundreds of micrometers in length and nanometer-featured tips. The nanoneedles show a α-Si 3 N 4 @SiOx core-shell heterostructure as characterized by TEM, with single-crystalline α-Si 3 N 4 core and an insulating amorphous silicon oxide shell. The growth of α-Si 3 N 4 nanoneedles corresponds to vapor-liquidsolid cap-growth and base-growth mechanism. Photoluminescence (PL) properties of the products were also characterized. An obvious emission peak at 400 nm under 254 nm UV excitation was observed. The nanoneedle morphology and photoluminescence properties of the products have potentials to be used in future optoelectronic nanodevices. K E Y W O R D SCVD, growth mechanism, nanoneedles, photoluminescence, α-Si 3 N 4 2374 | SHEN Et al.

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Section: Resultsmentioning

confidence: 99%

Facile synthesis of α‐Si₃N₄ nanoneedles and their photoluminescence properties

Shen

Liu

Zhang

et al. 2019

Int J Applied Ceramic Tech

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“…The formation mechanism of SiCNFs has been proposed in the previous reported. [37][38][39] Combined mechanism with experimental results, the V-S formation process could be discussed by Fig. 4.…”

Section: Preparation and Characterization Of The Supporting Scaffoldmentioning

confidence: 91%

Simple in situ synthesis of SiC nanofibers on graphite felt as a scaffold for improving performance of paraffin-based composite phase change materials

Wang

Yang

et al. 2022

RSC Adv.

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“…[93,94] To overcome these daunting challenges, a considerable number of studies have been devoted to establishing new strategies for the catalyst-free synthesis of wide bandgap semiconductor nanowires. These catalyst-free routes are based on both vapor-liquid-solid and vapor-solid mechanisms employing a wide range of synthesis techniques, such as CVD, [95][96][97][98][99] molecular beam epitaxy (MBE), [100][101][102][103][104][105] arc discharge processes, [106,107] carbothermal reduction, [108,109] thermal evaporation, [110,111] and oxide-assisted methods. [62,112] Among them, CVD and MBEbased growth methods are considered as the most frequently used techniques to produce high-quality crystalline nanowires of WBG semiconductor materials, especially SiC, diamond, and group III-nitride.…”

Section: Synthesis and Growth Of Bottom-up Nanowiresmentioning

confidence: 99%

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

et al. 2020

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Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III‐nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom‐up and top‐down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast‐emerging research field.

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Synthesis and formation mechanism of twinned SiC nanowires made by a catalyst-free thermal chemical vapour deposition method

Abstract: Twinned SiC nanowires were prepared on a silicon wafer by a simple catalyst-free thermal chemical vapour deposition (CVD) method.

Cited by 24 publications

References 36 publications

Facile synthesis of α‐Si₃N₄ nanoneedles and their photoluminescence properties

Facile synthesis of α‐Si₃N₄ nanoneedles and their photoluminescence properties

Simple in situ synthesis of SiC nanofibers on graphite felt as a scaffold for improving performance of paraffin-based composite phase change materials

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

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Synthesis and formation mechanism of twinned SiC nanowires made by a catalyst-free thermal chemical vapour deposition method

Abstract: Twinned SiC nanowires were prepared on a silicon wafer by a simple catalyst-free thermal chemical vapour deposition (CVD) method.

Cited by 24 publications

References 36 publications

Facile synthesis of α‐Si3N4 nanoneedles and their photoluminescence properties

Facile synthesis of α‐Si3N4 nanoneedles and their photoluminescence properties

Simple in situ synthesis of SiC nanofibers on graphite felt as a scaffold for improving performance of paraffin-based composite phase change materials

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

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Facile synthesis of α‐Si₃N₄ nanoneedles and their photoluminescence properties

Facile synthesis of α‐Si₃N₄ nanoneedles and their photoluminescence properties