2023
DOI: 10.1039/d3dt02727a
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Synthesis and feasibility studies of doping U at Ti site of Y2Ti2O7 as a radioactive waste immobilization matrix

Nitin Gumber,
Muhammed Shafeeq,
Santosh K. Gupta
et al.

Abstract: The article summarieses the crystal chemistry of Y2Ti2O7 for the Incorporation of U at Ti site as nuclear waste host matrix for nuclear industry.

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Cited by 5 publications
(1 citation statement)
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“…It is widely used in the synthesis of new phases and the study of materials, such as superhard materials and high-temperature superconductors. , Under pressure, pyrochlore materials can undergo unique physical phenomena, such as metal–semiconductor transition and spin liquid ordering. Under pressure induction, some pyrochlore materials may undergo structural phase transitions, phase decomposition, and pressure-induced amorphization. During the pressurization of Bi 2 Sn 2 O 7 pyrochlore up to 40.0 GPa, it underwent a tertiary structural phase transition sequence of P 1 c 1– P 3 1 – Fd 3̅ m . The displacement of Bi significantly changed with pressure during the pressurization process, indirectly regulating the material’s dielectric properties. Similarly, the Bi 2 Hf 2 O 7 system undergoes a phase transition process similar to that of bismuth stannate at high temperatures …”
Section: Introductionmentioning
confidence: 99%
“…It is widely used in the synthesis of new phases and the study of materials, such as superhard materials and high-temperature superconductors. , Under pressure, pyrochlore materials can undergo unique physical phenomena, such as metal–semiconductor transition and spin liquid ordering. Under pressure induction, some pyrochlore materials may undergo structural phase transitions, phase decomposition, and pressure-induced amorphization. During the pressurization of Bi 2 Sn 2 O 7 pyrochlore up to 40.0 GPa, it underwent a tertiary structural phase transition sequence of P 1 c 1– P 3 1 – Fd 3̅ m . The displacement of Bi significantly changed with pressure during the pressurization process, indirectly regulating the material’s dielectric properties. Similarly, the Bi 2 Hf 2 O 7 system undergoes a phase transition process similar to that of bismuth stannate at high temperatures …”
Section: Introductionmentioning
confidence: 99%