1997
DOI: 10.1063/1.366190
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Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas

Abstract: Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N 2 /CH 4 as the reactant gas without additional H 2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8ϫ10 20 atoms/cm 3. Electron field emission measurements give an onset field as low as 3.2 V/m. The effect… Show more

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Cited by 189 publications
(47 citation statements)
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“…For example, CVD technique has been used to synthesis highly oriented diamond thin ®lm [1] and fullerene [2] in the past. More recently, nanocrystalline diamond thin ®lms have been deposited from Ar/CH 4 microwave plasma enhanced CVD without the addition of molecular hydrogen in the reactant gas [3,4]. The nanocrystalline diamond thin ®lms have several desirable characteristics, among them: (a) small grain size and surface roughness of the diamond ®lms, (b) low grain boundary angle, and (c) synthesis from argon domain plasma.…”
Section: Introductionmentioning
confidence: 99%
“…For example, CVD technique has been used to synthesis highly oriented diamond thin ®lm [1] and fullerene [2] in the past. More recently, nanocrystalline diamond thin ®lms have been deposited from Ar/CH 4 microwave plasma enhanced CVD without the addition of molecular hydrogen in the reactant gas [3,4]. The nanocrystalline diamond thin ®lms have several desirable characteristics, among them: (a) small grain size and surface roughness of the diamond ®lms, (b) low grain boundary angle, and (c) synthesis from argon domain plasma.…”
Section: Introductionmentioning
confidence: 99%
“…The group headed by Gruen further optimized the deposition methodology, using mainly N for the doping and obtaining films with a high degree of conformality and very exciting FE properties. [49][50][51][52][53][54][55] Deep analysis of the films, performed by means of complex scanning probe microscopy methods, has evidenced in such films periodic structures where diamond crystallites are associated to high-conducting inclusions. Atomic force microscopy (AFM) in Spreading Resistance Imaging (SRI) configuration has allowed maps of the conductivity along the film nanostructure to be obtained.…”
Section: Nanodiamond Filmsmentioning
confidence: 99%
“…The incorporation of nitrogen (N) into conventional microcrystalline diamond (MCD) with micron-sized grains can not effectively improve the conductivity and EFE properties of the films because N-species form deep donor levels and do not enhance the conductivity. 6,7 In contrast, the conductivity and EFE properties of UNCD films can be markedly improved by incorporating N into their grain boundaries. 4,6,7 However, N incorporation via the addition of N 2 gas to the growth plasma is not efficient due to the small size of the UNCD grains.…”
Section: Introductionmentioning
confidence: 99%
“…6,7 In contrast, the conductivity and EFE properties of UNCD films can be markedly improved by incorporating N into their grain boundaries. 4,6,7 However, N incorporation via the addition of N 2 gas to the growth plasma is not efficient due to the small size of the UNCD grains. On the other hand, ion implantation (or irradiation) has long been used to modify the properties of materials through controlled doping with a variety of dopants.…”
Section: Introductionmentioning
confidence: 99%