Synthesis and electrochemical capacitance of long tungsten oxide nanorod arrays grown vertically on substrate

Park, Sun Hwa; Kim, Young Heon; Lee, Tae Geol; Shon, Ho Kyong; Park, Hyun Min; Song, Jianwei

doi:10.1016/j.materresbull.2012.06.053

Cited by 18 publications

(4 citation statements)

References 25 publications

(26 reference statements)

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“…These large capacitances are confirmed by the capacitance obtained from galvanostatic charge−discharge profiles measured at 0.5− 5 A g −1 , as shown in Figure 4c: the capacitance can reach 421.8 F g −1 at 0.5 A g −1 and maintain 311 F g −1 at a high charge− discharge rate (5 A g −1 ). It should be noted that the high specific capacitance achieved here is quite impressive when compared with those of supercapacitors based on other tungsten oxide materials, and even other popular materials 11,12,21,22,24,25,[28][29][30][31]33 (Table 1). In addition, the specific energy and power performance can reach near 10 Wh kg −1 at 1 kW kg −1 (Figure S3 in the SI).…”

Section: Resultsmentioning

confidence: 65%

“…Tungsten oxides are great electrochemically active materials for energy storage. ,,,− They have intriguingly fast and reversible surface redox reactions, which is associated with the similar W–O bond lengths in tungsten oxides with different oxidation states . Furthermore, the intrinsic high densities of tungsten oxides show potential applications in the fabrication of compact devices with excellent power performance .…”

Section: Introductionmentioning

confidence: 99%

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Proton-Insertion-Enhanced Pseudocapacitance Based on the Assembly Structure of Tungsten Oxide

Zhu

Meng

Huang

et al. 2014

ACS Appl. Mater. Interfaces

188

108

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The capacitances of supercapacitors with carbon and metal oxides as electrodes are usually associated with the available surface areas of the electrode materials. However, in this paper, we report that proton insertion, an unusual capacitive mechanism, may effectively enhance the capacitance of metal oxides with low surface area but specific structures. Tungsten trioxide (WO3) as the electrode material for supercapacitors has always suffered from low capacitance. Nevertheless, enhanced by the proton insertion mechanism, we demonstrate that electrodes fabricated by an assembly structure of hexagonal-phase WO3 (h-WO3) nanopillars achieve a high capacitance of up to 421.8 F g(-1) under the current density of 0.5 A g(-1), which is the highest capacitance achieved with pure WO3 as the electrodes so far, to the best of our knowledge. Detailed analyses indicate that proton insertion dominates the electrochemical behavior of h-WO3 and plays the key role in reaching high capacitance by excluding other mechanisms. In addition, a thorough investigation on the temperature-dependent electrochemical performance reveals excellent performance stability at different temperatures. This study provides a new approach to achieving high capacitance by effective proton insertion into ordered tunnels in crystallized metal oxides, which is primarily important for the fabrication of compact high-performance energy storage devices.

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Section: Resultsmentioning

confidence: 65%

Section: Introductionmentioning

confidence: 99%

Proton-Insertion-Enhanced Pseudocapacitance Based on the Assembly Structure of Tungsten Oxide

Zhu

Meng

Huang

et al. 2014

ACS Appl. Mater. Interfaces

188

108

View full text Add to dashboard Cite

show abstract

“…In the past few years, new preparation techniques for obtaining nanostructured gas sensing films have appeared with the aim of increasing significantly surface-to-volume ratio leading to an improvement in their gas sensing features [6][7][8][9][10][11]. Among these technologies, anodizing of sputter-deposited tungsten layers has the advantages of achieving tailored morphology and being well compatible with Si microtechnology [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Among these technologies, anodizing of sputter-deposited tungsten layers has the advantages of achieving tailored morphology and being well compatible with Si microtechnology [6][7][8]. The major drawback associated with nanostructured anodic WO 3 films is their chemical instability, which may cause degradation of film morphology and properties already during film growth [7].…”

Section: Introductionmentioning

confidence: 99%

Gas sensing properties of the nanostructured anodic Zr–W oxide film

Vázquez

Mozalev

Calavia

et al. 2014

Sensors and Actuators B: Chemical

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Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Bendová

Hubálek

Mozalev

2016

Adv Materials Inter

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size effect. [1][2][3] Eventual functionalization of WO x nanostructures through modifying the surface and interfacial properties by combining, doping, or decorating the pure oxide with other nanomaterials creates additional metal/semiconductor or semiconductor/semiconductor interfaces and grain boundaries capable of further infl uencing the sensing, electrical, optical, and opto-electronic properties or even introducing novel unique functionalities. [4][5][6] Contrarily to WO x nanostructures with no directional orientation of its morphological units, like disordered 1D nanowires or nanorods grown by vapor-and liquid-phase methods, [ 1,7 ] oriented 1D WO x nanostructures, self-organized and upright-standing on a conducting substrate, without mutually intersecting with each other are expected to bring more advantages for practical applications in nanoscale electrochromic, [ 8,9 ] fi eldemission, [ 10 ] gas-sensing, [ 11 ] and photonic devices. Moreover, substrate-supported 1D nanostructures assembled in an array would enable the use of their integral properties, especially electrical, optical, or mechanical in contrast with the formation and application of single nanowires relying on their individual characteristics. [ 12,13 ] Synthesis of WO x nanostructures regularly aligned on substrates has been an active and competitive area of nanoscience and nanotechnology as the arrays of 1D structures often suffer from mechanical weakness and randomly dispersed physical contacts between neighboring units, limiting their performance in a device. Besides, creating welldefi ned nanoscale metal/semiconductor electrical and thermal interfaces and boundaries by contacting the tops of 1D nanostructures assembled in an array in a reliable and reproducible manner to benefi t from the characteristics measured along the nanostructures and across relevant interfaces has been a challenge. [8][9][10][11][14][15][16][17] Surface engineering of aluminum [ 18 ] and porous anodic alumina (PAA) fi lms grown by anodic oxidation (anodizing) of aluminum have been of increasing interest for lithography-free templating of metals, dielectrics, and semiconductors. [19][20][21][22] PAA-assisted anodization [ 23 ] of certain valve metals sputtered on substrates, including tungsten, [24][25][26] has proven its potential as a reproducible method for electrochemically forming self-organized vertically aligned spatially separated 1D nanostructures (nanocolumns, rods, or tubes), being nearly ideally electrically and mechanically bonded at their bottoms either to the substrate metal [ 26 ] or to a continuous solid layer of similar metal oxide that grows at the columns/substrate-metal interface. [ 24,25 ] On the way An array of semiconducting tungsten-oxide (WO x ) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modifi ed by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnec...

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Synthesis and electrochemical capacitance of long tungsten oxide nanorod arrays grown vertically on substrate

Cited by 18 publications

References 25 publications

Proton-Insertion-Enhanced Pseudocapacitance Based on the Assembly Structure of Tungsten Oxide

Proton-Insertion-Enhanced Pseudocapacitance Based on the Assembly Structure of Tungsten Oxide

Gas sensing properties of the nanostructured anodic Zr–W oxide film

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

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Synthesis and electrochemical capacitance of long tungsten oxide nanorod arrays grown vertically on substrate

Cited by 18 publications

References 25 publications

Proton-Insertion-Enhanced Pseudocapacitance Based on the Assembly Structure of Tungsten Oxide

Proton-Insertion-Enhanced Pseudocapacitance Based on the Assembly Structure of Tungsten Oxide

Gas sensing properties of the nanostructured anodic Zr–W oxide film

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

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Product

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About

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers