2010
DOI: 10.4236/msa.2010.14029
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Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)

Abstract: BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-… Show more

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Cited by 14 publications
(8 citation statements)
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“…Small Raman band at 1058 cm -1 represents the presence of some BaCO 3 impurities in BaTiO 3 samples annealed at 600, 700, 800°C while Raman bands at 805 and 856 cm -1 for BaTiO 3 samples annealed at 900°C are related to the oxygen deficiencies. The observed Raman bands are consistent with the standard peaks reported for BaTiO 3 [17]. The appearance of Raman bands at 712 cm -1 and 304 cm -1 can be attributed to the highest longitudinal optical mode with A1 symmetry and the B 1 mode indicating the presence of asymmetry within the TiO 6 octahedra of BaTiO 3 , respectively.…”
Section: Resultssupporting
confidence: 86%
“…Small Raman band at 1058 cm -1 represents the presence of some BaCO 3 impurities in BaTiO 3 samples annealed at 600, 700, 800°C while Raman bands at 805 and 856 cm -1 for BaTiO 3 samples annealed at 900°C are related to the oxygen deficiencies. The observed Raman bands are consistent with the standard peaks reported for BaTiO 3 [17]. The appearance of Raman bands at 712 cm -1 and 304 cm -1 can be attributed to the highest longitudinal optical mode with A1 symmetry and the B 1 mode indicating the presence of asymmetry within the TiO 6 octahedra of BaTiO 3 , respectively.…”
Section: Resultssupporting
confidence: 86%
“…Moreover, the emergence of a maximum at 599 cm −1 is a specific fingerprint of hydroxyapatite [71]. The vibrational band typical of the Ti-O bond, which is located somewhere in the range 450-550 cm −1 , is hidden by the more intense contributions of the (PO 4 ) 3− group [16,72,73]. The FTIR spectra registered on the samples subjected to heat treatments exhibit a well-defined individual band with a maximum around 720 cm −1 (Figure 8b); this is a mark of the vibrational characteristics of the (P 2 O 7 ) 4− group, which was formed by a condensation reaction between two (HPO 4 ) 2− groups at high temperatures [17,74].…”
Section: Resultsmentioning
confidence: 99%
“…Additionally, Farahmandjou and Abeiyan ascribe the band at 730 cm −1 to the V–O–V asymmetric stretching. FTIR spectra of the doped sample show a band at 785 cm −1 , which corresponds to vibrations of the Zr–O bond [ 36 ].…”
Section: Resultsmentioning
confidence: 99%