Synthesis and characterization of β-Ga 2 O 3 nanowires on amorphous substrates using radio-frequency powder sputtering

Lee, S.Y.; Kang, Hyon Chol

doi:10.1016/j.jcrysgro.2014.11.030

Cited by 10 publications

(10 citation statements)

References 26 publications

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“…Details of the powder sputtering method have been reported elsewhere. [21][22][23][24][25] A sapphire (0001) substrate was used. Prior to the sputter deposition, the substrate was cleaned by applying a chemical cleaning process in an ultrasonic bath.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Argon gas was flowed into the chamber to create an oxygen-deficient atmosphere under which nonstoichiometric β-Ga 2 O 3 was typically deposited as reported previously. 25) The operating pressure during deposition was maintained at 5 × 10 −3 Torr. The deposition time was adjusted to prepare samples of various thicknesses ranging from 0.5 to 4.3 µm.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Sn-doped β-Ga₂O₃nanowires deposited by radio frequency powder sputtering

Lee

Kang

2017

Jpn. J. Appl. Phys.

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We report the synthesis and characterization of Sn-doped β-Ga 2 O 3 nanowires (NWs) deposited using radio frequency powder sputtering. The growth sequence of Sn-doped β-Ga 2 O 3 NWs is similar to that of the undoped β-Ga 2 O 3 NWs. Self-assembled Ga clusters act as seeds for initiating the growth of Sn-doped β-Ga 2 O 3 NWs through a vapor-liquid-solid process, while Sn atoms are incorporated into the trunk of NWs uniformly. Different from the straight shape of undoped NWs, the conical shape of NWs is observed, which is attributed to the change in supersaturation conditions and the diffusion of the catalyst tip and reaction species.

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Sn-doped β-Ga₂O₃nanowires deposited by radio frequency powder sputtering

Lee

Kang

2017

Jpn. J. Appl. Phys.

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“…A study in 2015 [101] used three different substrates: amorphous SiN/Si, SiOx/Si, and glass substrate for the deposition of β-Ga 2 O 3 powder, using RF powder sputtering. This synthesis was done in a pure argon gas environment with a chamber pressure of 0.005 Torr, and the placement of the substrate was 4 cm away from the target.…”

Section: Magnetron Sputteringmentioning

confidence: 99%

“…In general, published results show the annealing process plays an important role in gallium oxide formation; also, it was observed that combining of annealing and the addition of Mo with excess oxygen improved the formation of Ga 2 O 3 . The RF power has a minor role, as even with a lower power in [101] (when compared to [100]) there was formation of Ga 2 O 3 nanowires.…”

Section: Magnetron Sputteringmentioning

confidence: 99%

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Jamwal

Kiani

2022

Nanomaterials

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Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga2O3 are highlighted and discussed along with their transformation state to β-Ga2O3. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga2O3 nanostructures are discussed.

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“…In our previous works, 12,13) β-Ga 2 O 3 NWs were fabricated by a radio-frequency (RF) powder sputtering method, in which NWs were grown through a self-catalytic VLS process with self-assembled Ga seeds. One drawback of the resulting NWs is that their diameter typically exceeds 100 nm.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of branched β-Ga₂O₃ nanowires by post deposition annealing with Au seeds

Lee

Kang

2016

Jpn. J. Appl. Phys.

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We report the fabrication of branched β-Ga2O3 nanowires (NWs) by a post deposition-annealing process of host β-Ga2O3 NWs with Au catalyst seeds. The host β-Ga2O3 NWs grown by powder sputtering were decorated by Au thin films and then annealed at temperatures greater than 800 °C in vacuum, oxygen, and nitrogen atmospheres. No significant morphological changes were observed in the samples annealed under the oxygen atmosphere, while the dissociation of Ga2O3 into Ga and O species occurred in the samples annealed in vacuum and nitrogen atmosphere. In the case of annealing under the nitrogen atmosphere, however, branched β-Ga2O3 NWs were formed through a vapor–liquid–solid process with Au seeds, indicating that nitrogen atmosphere facilitates the supersaturation of Ga and O vapors into catalytic Au seeds. We observed that the photoluminescence peak intensity of branched NWs was increased by a factor of 20 compared with that of the host NWs. The peak position was also shifted from ∼500 to ∼640 nm.

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Synthesis and characterization of β-Ga 2 O 3 nanowires on amorphous substrates using radio-frequency powder sputtering

Cited by 10 publications

References 26 publications

Sn-doped β-Ga₂O₃nanowires deposited by radio frequency powder sputtering

Sn-doped β-Ga₂O₃nanowires deposited by radio frequency powder sputtering

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Fabrication of branched β-Ga₂O₃ nanowires by post deposition annealing with Au seeds

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Synthesis and characterization of β-Ga 2 O 3 nanowires on amorphous substrates using radio-frequency powder sputtering

Cited by 10 publications

References 26 publications

Sn-doped β-Ga2O3nanowires deposited by radio frequency powder sputtering

Sn-doped β-Ga2O3nanowires deposited by radio frequency powder sputtering

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Fabrication of branched β-Ga2O3 nanowires by post deposition annealing with Au seeds

Contact Info

Product

Resources

About

Sn-doped β-Ga₂O₃nanowires deposited by radio frequency powder sputtering

Sn-doped β-Ga₂O₃nanowires deposited by radio frequency powder sputtering

Fabrication of branched β-Ga₂O₃ nanowires by post deposition annealing with Au seeds