Abstract:Tb-doped AlBNO (AlBNO:Tb) films with various composition ratios are investigated for luminescence layers of inorganic electroluminescence(EL) devices. Luminescence layers with a wide bandgap and a low dielectric constant are required to realize high performance of EL devices. The ultraviolet-visible radiation absorption measurement and capacitance-voltage (C-V) measurement show that the AlBNO:Tb films have wider bandgap and lower dielectric constant than ZnS which is put to practical use as the host material o… Show more
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