Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

Synthesis and high temperature XRD studies of tantalum nitride thin films prepared by reactive pulsed dc magnetron sputtering

“…8(a) show the binding energy values of the low energy side doublets of Ta (Ta 4f 7/2 = 23.875 eV and Ta 4f 5/2 = 25.55 eV). These values are in good agreement with the values of TaN powders [26]. Zhang et al [27] have reported a value of about 23.5 eV for the Ta 4f 7/2 of cubic TaN film formed by ion beam assisted deposition.…”

Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaN[sub x] on Adhesion with Copper

“…The Ta 4f 7/2 peak situated at ϳ23.7 eV probably corresponds to the pristine TaN x chemical form of the PE-ALD tantalum nitride thin film, where x may vary from some fraction value to 1. [14][15][16][17] Because oxy- gen distributes through the PE-ALD thin film as discussed later about the AES depth profile, the Ta 4f 7/2 peaks situated at ϳ24.9 and ϳ26.1 eV are likely due to the chemical states of TaO x N y and TaO x , respectively. 16,18,19 The presence of the oxygen-containing states is ascribed to oxidation of the PE-ALD TaN x thin film during the shelf period waiting for the XPS analysis.…”

“…For reference, Table I summarizes the binding energies of the Ta 4f 7/2 electron for various Ta oxidation states from previous reports. [14][15][16][17][18][19][20] We only address the Ta 4f 7/2 peak in the following discussion for clarity. As shown in Fig.…”

Growth and Study of Plasma Assisted Nanostructured Hard Tantalum Nitride Thin Films

“…These films have also been comprehensively used as key elements of mask absorbers of X-ray lithography and hard protective coatings [8,9]. The blood compatibility of TaN has also been found superior than that of low-temperature isotropic pyrolytic carbon (LTIC) which has so far been most widely acknowledged biomedical material used in artificial heart valves [10].…”