2007
DOI: 10.1016/j.vacuum.2006.12.017
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Synthesis and characterization of some binary chalcogen compounds by explosive laser irradiation and heat treatment

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Cited by 4 publications
(3 citation statements)
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“…Kar et al and Yao et al have determined the band gap of tin selenide thin film as 1.65 and 1.56 eV respectively. 10,28 This waved range of bandgap was theoretically explained by modeling the band structure of SnSe based on density functional theory. 29 The optimum locus of the band gap was also studied by Makinistian et al 10 using full potential plane wave and spin-orbit interactions.…”
Section: Resultsmentioning
confidence: 99%
“…Kar et al and Yao et al have determined the band gap of tin selenide thin film as 1.65 and 1.56 eV respectively. 10,28 This waved range of bandgap was theoretically explained by modeling the band structure of SnSe based on density functional theory. 29 The optimum locus of the band gap was also studied by Makinistian et al 10 using full potential plane wave and spin-orbit interactions.…”
Section: Resultsmentioning
confidence: 99%
“…The changes in the thermally treated specimens are much faster than those observed in case of laser treatment (Kar et al,2007). This is due to the fact that the optical matching of these materials are tantamount with the third harmonics of the Nd : YAG pulsed laser in that zone when the energy is mostly utilized under lasing action.…”
Section: Crystallographic Studymentioning
confidence: 98%
“…Metal sulphides are fascinating the researchers continuously because of their interesting properties, which can be easily tailored by using different deposition techniques and /or by different post-deposition treatments. The commonly employed post treatment methods are thermal annealing (Karuppasamy and Subrahmanyam, 2007), laser irradiation (Kar et al, 2007), ion bombardment (Kamboj et al, 2002) and electron irradiation (Hou and Liu, 2008). During post-deposition treatment, the following general trend has been observed: smaller grains tend to grow in size and decrease in film porosity by filling up of voids, improvement in the crystallinity and a change in band gap occurred after thermal treatment.…”
Section: Introductionmentioning
confidence: 99%