“…Most metal nitride nanoparticles were synthesized with high crystallinity in the thermal plasma processes; however, synthesis of crystalline silicon nitride (α-Si 3 N 4 ) nanoparticles has been very challenging. Most reaction products were either heavily contaminated by silicon nanoparticle by-products (2.45 GHz microwave plasma, 1 kW, Ar/N 2 /H 2 plasma, silicon tetrachloride (SiCl 4 ) precursor) or were less crystallized (DC, 10 11 kW, Ar plasma, SiCl 4 /NH 3 /H 2 precursors, 15 75 kPa) [37,38]. This was caused by exposure to temperatures above 1,850 when the silicon nitride was decomposed into silicon and nitrogen.…”