Synthesis and characterization of rectangular V2O5 microrods

Dhoundiyal, Hemlata; Rahman, Habeebur; Bhatnagar, M.C.

doi:10.1016/j.matpr.2020.12.420

Cited by 2 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The highresolution XPS spectra of V 2p has been fitted with two higher intense peaks at 515.1 and 523.9 eV corresponding to V 2p 3/2 and V 2p 1/2 , respectively. 49 The peak splitting is triggered by a spin−orbit interaction. V 2p 3/2 is also split into two peaks at 516.4 and 517 eV, which reveals the V +4 and V +5 oxidation states of vanadium, respectively [Figure 1(c)].…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Kaushlendra,

Kaur

2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Bioinspired neuromorphic computing (NC) is attracting significant research interest due to the imitation of the human brain functioning in electronic devices. The current study describes a flexible Cu/V 2 O 5 /NiMnIn-based memory device fabricated using the direct current (DC) magnetron sputtering technique on a flexible Ni substrate. It manifests the simultaneous existence of analog and abrupt switching characteristics, making it promising for neuromorphic applications. The switching behavior is explained through the proposed analytical model. In abrupt resistive switching, the device displays reasonably high OFF/ ON resistance ratio (∼4.1 × 10 3 ), endurance (∼5000 cycles), and data retention time (∼4500 s). The tunability of the device has been investigated by studying the influence of external stimuli, such as temperature and magnetic field anisotropy, on the SET voltage. The realization of long-term potentiation (LTP) and long-term depression (LTD) synaptic functions in analog switching demonstrates the nonlinear and asymmetric features of the device. The effect of temperature on the LTP, LTD, and memory window has been thoroughly investigated. The strain generated in the NiMnIn layer during the first-order martensite transformation aids in tuning the LTP and LTD of the device. The negative and positive piezomagnetic coefficients of Ni and NiMnIn lead to magnetization-graded ferromagnetic assembly and enhance the linearity of LTP and LTD. Additionally, the memory device exhibits outstanding flexibility. The current work opens up new possibilities for upcoming neuromorphic applications.

show abstract

Section: Methodsmentioning

confidence: 99%

“…The C 1s peak observed at 284.7 eV is used for calibration. The highresolution XPS spectra of V 2p has been fitted with two higher intense peaks at 515.1 and 523.9 eV corresponding to V 2p 3/2 and V 2p 1/2 , respectively 49. The peak splitting is triggered by a spin−orbit interaction.…”

mentioning

confidence: 99%

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Kaushlendra,

Kaur

2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

Size-induced metal–insulator transition temperature decrease of VO2 nanoparticles obtained by laser irradiation in water

Beckerle,

Cezar,

Neckel

et al. 2023

Journal of Applied Physics

View full text Add to dashboard Cite

Vanadium dioxide (VO2) is a highly attractive and multifunctional material for technological applications due to its metal–insulator transition, which is accompanied by several orders of magnitude changes in electrical resistivity and optical transmissivity. In this work, we report on the metal–insulator transition of VO2 nanoparticles which are produced by a simple, efficient, and low-cost two-step preparation method based on infrared laser irradiation of V2O5 powder dispersed in water and subsequent stoichiometric stabilization by vacuum annealing at 773 K. VO2 nanoparticles have an average size of 36 nm with facet-like contours and undergo a structural phase transition from a monoclinic to a tetragonal phase, accompanied by a metal–insulator transition occurring around 323 K, which is about 17 K lower than bulk VO2. No evidence of the formation of intermediary metastable phases is observed. Our findings reveal that the size of VO2 nanoparticles is a key parameter to moving the transition closer to room temperature, which is important for many applications.

show abstract

Synthesis and characterization of rectangular V2O5 microrods

Cited by 2 publications

References 10 publications

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Size-induced metal–insulator transition temperature decrease of VO2 nanoparticles obtained by laser irradiation in water

Contact Info

Product

Resources

About

Synthesis and characterization of rectangular V2O5 microrods

Cited by 2 publications

References 10 publications

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V2O5 Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V2O5 Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Size-induced metal–insulator transition temperature decrease of VO2 nanoparticles obtained by laser irradiation in water

Contact Info

Product

Resources

About

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing