Synthesis and characterization of one-dimensional vertically aligned Sb-doped ZnO nanowires

Abstract

Vertically aligned undoped ZnO and Sb-doped ZnO nanowires have been synthesized on a silicon substrate using the vapor-solid technique, without using a catalyst or predeposited buffer layers. The structure and morphology of the assynthesized nanowires are characterized using X-ray diffraction, scanning and transmission electron microscopies, selected area electron diffraction, and electron dispersive X-ray spectroscopy. The results showed that the use of Si(111) is a critical factor for the growth of vertically aligned nanowires. This is a result of the lattice match on Si (111), which is more favorable with the ZnO lattice structure because the Si(111) surface is hexagonal and has a smaller lattice constant of 3.840 Å . The photoluminescence properties were also investigated at room temperature (300 K). The UV peaks of undoped and Sbdoped ZnO nanowires are located at 3.33 and 3.29 eV, respectively. This redshift of 0.04 eV in the Sb-doped ZnO indicates a reduction of the ZnO band gap caused by the Sb dopant. The temperature-dependent photoluminescence spectra of Sb-doped ZnO nanowires from 10 to 300 K were also examined. This measurement showed that at 10 K several peaks appear, at 3.36, 3.23 and 3.04 eV, which were assigned as acceptor-bound excitons, a donor-acceptor pair and a zinc-vacancy-related peak, respectively. These peaks are shifted with the increase of temperature up to 300 K.

Synthesis and characterization of surface patterned nanoimprinted in1–xCrxP/P(VDF‐TrFE) nanocomposite films for solar cell application potential

“…where, the d is the space lattice parameter which can be estimated from Bragg's law …”

“…where, the d is the space lattice parameter which can be estimated from Bragg's law [72][73][74][75][76][77][78][79][80][81]…”

Electrochemical growth of GaSe nanostructures and their Schottky barrier characteristics

“…The gallium selenide nanostructures were prepared as follow, 0. using Scherrer formula [16,17] at the most intense (004) reflection plane and found to be 23 nm. Figure 1b Figure 1c depicts HRTEM image of the GaSe nanoparticles.…”

Synthesis and characterization of PVA/YBCO nanocomposite for improvement of solar energy conversion

“…Polymer is assumed to be a perfect hosting matrix for composite materials because they can easily be designed to provide an assortment of physical characteristics (1–3). Moreover, these polymers commonly have ease of processability and high stability.…”