Synthesis and characterization of novel yttrium-incorporated copper selenide (CuSe:Y) thin materials for solar energy applications

Akpu, Nwamaka I.; Asiegbu, Anyalewechi Daniel; Nnanna, Lebe A.; Ikhioya, Imosobomeh L.; Mgbeojedo, Tochukwu Innocent

doi:10.1007/s10854-021-07397-x

Cited by 7 publications

(6 citation statements)

References 18 publications

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“…42,43 The XPS profiles of Se 2d for all samples exhibit two photoelectron bands with binding energy values of 54.2 eV and 55.0 eV, designated as Se 2d 5/2 and Se 2d 3/2 , respectively, known as standard peaks of Se. 2–42,44 The identical patterns of both of the Cu 2p peaks and Se 3d peaks for each nanoparticle indicate the existence of CuSe.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 91%

“…9,17,18 Metal doping in binary CuSe semiconductors plays a crucial role in enhancing their properties, such as ability to tune bandgap, control carrier concentration, enhance electrical conductivity, tailor optical properties, and improve stability. [19][20][21][22][23] These capabilities expand the range of potential applications of CuSe nanoparticles and pave the way for the development of advanced electronic, optoelectronic, and energy-related devices. Within the realm of existing literature, numerous investigations delved into transition metal-doped CuSe materials in both nanocrystal and thin film formats.…”

Section: Introductionmentioning

confidence: 99%

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The impact of Ni and Zn doping on the thermal durability and thermoelectric variables of pristine CuSe nanoparticles

Patel,

Chaki,

Solanki

et al. 2023

Mater. Adv.

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Section: X-ray Photoelectron Spectroscopymentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

The impact of Ni and Zn doping on the thermal durability and thermoelectric variables of pristine CuSe nanoparticles

Patel,

Chaki,

Solanki

et al. 2023

Mater. Adv.

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“…For example, Jia et al mixed Gd 2 O 3 /Eu 3+ phosphor with poly(methyl methacrylate) (PMMA) to form a transparent composite film with a quantum spectral response at 200–400 nm. Akpu et al reported that with the increase of the doping content of yttrium (Y), the band gap of the CuSe/Y film decreases linearly, indicating that the rare earth element Y can be used as a doping element to narrow the band gap. However, there are few studies on the preparation of SBUV photovoltaic detectors by magnetron sputtering doped RE elements in WBG semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Electron. Mater.

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Aluminum nitride (AlN) has been proven as a potential photoelectric material with high breakdown field strength, excellent thermal conductivity, and stable physical properties. However, its ultrawide intrinsic band gap (6.2 eV) prohibits the direct application of AlN as an optical absorption layer for solar-blind ultraviolet (SBUV) detectors. To solve this problem, AlYN thin films with a SBUV absorption cut-off edge of 264 nm were prepared first by energy band engineering using yttrium (Y) as the dopant, based on which a photovoltaic detector with a p-Gr/i-AlYN/n-Si structure was fabricated and exhibited excellent performance of SBUV detection at 0 V bias, including an extremely short rise time (t r) of 20 ms, a decay time (t d) of 60 ms, an ultrahigh detectivity (D*) of 5.09 × 1012 Jones, a responsivity (R) of 13 mA/W, a maximum external quantum efficiency (EQE) of 6.69%, and a rejection ratio (R 255nm/R 310nm) of 245. This work has great value as a reference for the preparation of high-performance AlN-based SBUV detectors.

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“…Numerous researches have been carried out on the deposition, characterization and possible application of metal selenides such as CdSe, CuSe, CoSe, ZnSe, SnSe [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Generally, selenide nano materials have been instrumental in production of photovoltaic, electronics and optoelectronic devices such as laser materials, LEDs, sensors, diodes, transistors, solar cells etc [3,5,[14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…It can also act as an acceptor or donor ion. Another major effect of yttrium doping is the change in the electrical conductivity of doped material with respect to the doping site [6].…”

Section: Introductionmentioning

confidence: 99%

Impact of temperature difference on the features of spray deposited yttrium doped cobalt selenide (YCoSe) thin films for photovoltaic application

Akpu,

Okpechi,

Elizabeth

et al. 2023

Afr. Sci. Rep.

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In this investigation, spray deposited yttrium doped cobalt selenide (YCoSe) thin materials were synthesized in soda lime glass and the impact of substrate temperature (140 oC, 160 oC, 180 oC and 200 oC) on their elemental composition, surface morphology, structural, electrical and optical properties were investigated using scanning electron microscopy-SEM X-ray diffraction –XRD, four-point probe and UV-VIS spectrophotometer respectively. The EDX plots of the deposited undoped and Y-doped cobalt selenide revealed the major elements: cobalt, selenium and yttrium. This confirms the deposition of CoSe and Y-doped CoSe thin materials. The morphology of undoped CoSe thin materials was very rough containing randomly oriented non-uniform thin particles while addition of Y dopant (0.1 mol%) at substrate temperature of 140 oC gave a homogenous distribution of compact rectangular-like nanograins. The XRD result shows that the films are cubic polycrystalline in nature and the film grown at substrate temperature of 180 oC was seen to give the most excellent crystalline quality and a preferential orientation along (111) direction. From electrical results it was observed that increase in substrate temperature increased the film thickness with decreased resistivity and increased conductivity. The optical properties were found to vary with substrate temperature despite the fact that the variation was not totally linear, as the film deposited at substrate temperature of 160 oC deviated from the linearity in all the optical properties. The energy band gap of the deposited samples ranges from 1.25 eV–1.75 eV. The materials produced could be used in the production of photovoltaic devices.

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Synthesis and characterization of novel yttrium-incorporated copper selenide (CuSe:Y) thin materials for solar energy applications

Cited by 7 publications

References 18 publications

The impact of Ni and Zn doping on the thermal durability and thermoelectric variables of pristine CuSe nanoparticles

The impact of Ni and Zn doping on the thermal durability and thermoelectric variables of pristine CuSe nanoparticles

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Impact of temperature difference on the features of spray deposited yttrium doped cobalt selenide (YCoSe) thin films for photovoltaic application

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