2019
DOI: 10.1016/j.ijrmhm.2018.08.004
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Synthesis and characterization of micro-spherical tungsten-molybdenum alloy particles using spray drying combined with microwave assisted calcination process

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Cited by 18 publications
(3 citation statements)
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“…Moreover, different particle size distribution and microstructure of particles atomized can be obtained by controlling spray drying parameters [16, 18, 20, 22, 23]. In our previous study, high-performance ruthenium, micro-spherical tungsten-molybdenum alloy, and ruthenium compound particles were achieved by the spray drying process [2123]. Therefore, the spray drying method can be chosen to synthesize nanoscale spherical W particles by optimizing spray drying parameters.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, different particle size distribution and microstructure of particles atomized can be obtained by controlling spray drying parameters [16, 18, 20, 22, 23]. In our previous study, high-performance ruthenium, micro-spherical tungsten-molybdenum alloy, and ruthenium compound particles were achieved by the spray drying process [2123]. Therefore, the spray drying method can be chosen to synthesize nanoscale spherical W particles by optimizing spray drying parameters.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 5 b displays the results of the experimental residual analysis, indicating a virtually straight and outlier-free distribution of the experimental residual values. As a result, the selected model demonstrates soundness, close alignment of experimental results with expected values, and effective capture of the relationship between factors and response values [ 33 ].…”
Section: Resultsmentioning
confidence: 99%
“…Mo is a typical refractory metal with a melting point of 2,623 o C and a density of 10.28 g/cm 3 . it is also chemically stable and has excellent thermal and electrical properties [7,8]. Therefore, Mo is deposited by physical vapor deposition (PVD) such as sputtering on the glass substrate to form barrier layers for metal wiring of displays or semiconductor devices [9].…”
Section: Introductionmentioning
confidence: 99%