Synthesis and characterization of HgI2 nanoparticles for films nucleation

Barthaburu, María Pérez; Galain, Isabel; Mombrú, Maia; Aguiar, I.; Olivera, Álvaro; Pereira, Heinkel Bentos; Fornaro, L.

doi:10.1016/j.jcrysgro.2016.08.064

Cited by 6 publications

(1 citation statement)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…HgI 2 nanostructures were prepared with morphologies of nanoparticles and nanorods [2]. Due to excellent physical and chemical properties of nanostructured HgI 2 , it used in various technological and industrial potential applications, for example, photodetector, solar cells, ionization radiation detector, and nanocatalyst [3][4][5]. Its tunable energy gap is one of the most important property that enables HgI 2 to be used signi cantly for optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Nanostructured HgI2 Nanotubes/Si Photodetector by Laser Ablation in Liquid

Abd-Alrahman

Ismail

Mohammed

2022

Silicon

View full text Add to dashboard Cite

In this work, HgI 2 nanotubes/Si heterojunction has been prepared by pulsed laser ablation in ethanol at laser uence of 12.7 J/cm 2 . The structural and optical properties of HgI 2 nanotubes (NTs) are studied.The X-ray diffraction (XRD) result shows the presence of the mixture of tetragonal and orthorhombic phases of HgI 2 . The optical properties results show that the optical energy gap of HgI 2 NTs was 2.98 eV measured at room temperature. The photoluminescence (PL) spectra of HgI 2 display a single emission centered at 535nm. Fourier transformed infrared (FT-IR) results reveal the existence of small bonds at 612 and 1102 cm − 1 . Scanning electron microscope (SEM) image show formation of nanotubes and spherical nanoparticles with average particle size of 23nm. Transmission electron microscope (TEM) image of HgI 2 con rms the formation of nanotubes morphology with an average diameter of 80nm and an average length of 1.6µm. The I-V curve of HgI 2 NTs/p-Si heterojunction were measured at dark and illumination.The responsivity of HgI 2 NTs/p-Si heterojunction photodetector is 1.09A/W at 450 and the detectivity and external quantum e ciency are 3.6 ×10 12 Jones at 450 and 3×10 2 % at 400nm, respectively, without using post annealing.

show abstract

Section: Introductionmentioning

confidence: 99%