2007
DOI: 10.1016/j.jnoncrysol.2006.10.041
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Synthesis and characterization of hafnium oxide and hafnium aluminate ultra-thin films by a sol–gel spin coating process for microelectronic applications

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Cited by 25 publications
(8 citation statements)
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“…Hafnium oxide has been extensively investigated as an alternative material to replace the silicon dioxide as the gate dielectric systems of microelectronic devices and reduce the leakage currents in the miniaturization of modern devices [5,6]. Because of its high dielectric constant ($25), relatively low leakage current, high band gap ($5.68 eV) [7,8], and high transparency, it can be used in the liquid crystal (LC) alignment process to increase the capacitance of the inorganic alignment layer for the low-voltage driving of LCs [9].…”
Section: Introductionmentioning
confidence: 99%
“…Hafnium oxide has been extensively investigated as an alternative material to replace the silicon dioxide as the gate dielectric systems of microelectronic devices and reduce the leakage currents in the miniaturization of modern devices [5,6]. Because of its high dielectric constant ($25), relatively low leakage current, high band gap ($5.68 eV) [7,8], and high transparency, it can be used in the liquid crystal (LC) alignment process to increase the capacitance of the inorganic alignment layer for the low-voltage driving of LCs [9].…”
Section: Introductionmentioning
confidence: 99%
“…This good composition is similar to those reported previously. 14,41 We calibrated the binding energies by setting the residual C(1s) peaks at 284.6 and 288.0 eV, and the O(1s) peak at 533.9 eV. We find the band intensity of O(1s) peak remains strong and C(1s) peak decreases upon plasma treatment.…”
Section: Effect Of O 2 Plasma On Hfo 2 Thin Film Formationmentioning
confidence: 99%
“…Nevertheless, such a thin SiO 2 -dielectric layer imposes severe constraints on the device performance because this thickness approaches the quantum-tunneling limit and decreases the reliability of the metal oxide semiconductor field effect transistors (MOSFETs). 14 For a small system with scaled-down thickness, the need for advanced materials is progressively focusing on composite systems that maintain or enhance the device performance. To address the issue of the leakage current, hafnium oxide (HfO 2 ) has become one of the most promising candidates for use as an alternative gate dielectric to replace SiO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…The sol-gel technology finds applications in the development of new materials for catalysis [18], chemical sensors [19,20], membranes [21,22], optical gain media [23], photochronic applications [24] and solid state electrochemical devices and in a diverse range of scientific and engineering fields, such as ceramic industry, nuclear industry and electronic industry [25]. Sol-gel is one of the most exploited methods; it is used mainly to produce thin film and powder catalysts.…”
Section: Introductionmentioning
confidence: 99%