2001
DOI: 10.1021/ic010507q
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Synthesis and Characterization of Gallium Silylamido Complexes

Abstract: The reaction between GaCl(3) and 1 equiv of HN(SiMe(2)Ph)(2) in CH(2)Cl(2) solution affords colorless crystals of [Cl(2)Ga[mu-N(H)SiMe(2)Ph]](2) (1). The related reaction between GaCl(3) and 1 equiv of LiN(SiMe(2)Ph)(2) in hexane solution results in the isolation of colorless crystals of [PhGa[N(SiMe(2)Ph)(2)](mu-Cl)](2) (2). In contrast, treatment of GaCl(3) with 1 equiv of N(SiMe(3))(3) in CH(2)Cl(2) solutions affords colorless crystals of [MeGaCl(2)](2) (4). Compounds 2 and 4 are the result of monochloride … Show more

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Cited by 35 publications
(38 citation statements)
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References 31 publications
(38 reference statements)
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“…Carmalt et al have observed a similar Si-C bond cleavage in the reaction of GaCl 3 with (Me 3 Si) 3 N yielding among other things dimeric (MeGaCl 2 ) 2 . 9 Methyl-Exchange Reactions in Bis(trimethylsilyl)amino(dichloro)arsane (3). To gain further insight into GaCl 3 -assisted methyl/chlorine exchange reactions, we applied this reaction type to 3 and other arsenic species.…”
Section: Resultsmentioning
confidence: 99%
“…Carmalt et al have observed a similar Si-C bond cleavage in the reaction of GaCl 3 with (Me 3 Si) 3 N yielding among other things dimeric (MeGaCl 2 ) 2 . 9 Methyl-Exchange Reactions in Bis(trimethylsilyl)amino(dichloro)arsane (3). To gain further insight into GaCl 3 -assisted methyl/chlorine exchange reactions, we applied this reaction type to 3 and other arsenic species.…”
Section: Resultsmentioning
confidence: 99%
“…Selected bond lengths (Å) and angles (°): Ga1-C1 1.978(5), Ga1-N1 1.870(2), N1-Ga1-C1 117.71(1), N1-Ga1-N1′ 124.56(1). chloride complexes MeGaCl 2 (Carmalt et al, 2001;Lustig and Mitzel, 2004) and Me 2 GaCl (Lustig and Mitzel, 2004), the Ga-C bond lengths adopt much lower values of 1.921(3) and 1.933(7), respectively.…”
Section: Resultsmentioning
confidence: 98%
“…The formation of GaN films from single-source precursors depicts a more exploited field of application for gallium hydrides (see, e.g., Atwood et al, 1991a;McMurran et al, 1998;Carmalt et al, 2001;Luo et al, 2004). The most widely applied technique to generate GaN films is the dual-source chemical vapor deposition (CVD) of Me 3 Ga or Et 3 Ga with ammonia at high temperatures (Neumayer and Ekerdt, 1996).…”
Section: Introductionmentioning
confidence: 99%
“…29 This study examines and compares a selection of tungsten imido compounds, (3), (py = pyridine) and [W(N t Bu) 2 Cl(N{SiMe 3 } 2 )] (4) as potential (LP)CVD and (AA)CVD precursors. Although some of the compounds have been described previously, 5,30,31 their thermal properties have not been investigated and by tuning the ligands surrounding the tungsten centre we have successfully isolated some volatile precursors with ideal thermal properties for CVD.…”
Section: Introductionmentioning
confidence: 99%