Synthesis and characterization of doped-ZnO thin films over wide temperature range for applications as a transparent conducting material

Azad, Seema; Chand, Subhash

doi:10.1007/s00339-023-06973-8

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2024

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Cited by 2 publications

References 46 publications

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Investigations on electrical and sensing behaviors of Fe doped ZnO nanoparticles

Rathod,

Tiwari,

Parmar

et al. 2024

Nano-Structures & Nano-Objects

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Investigations on electrical and sensing behaviors of Fe doped ZnO nanoparticles

Rathod,

Tiwari,

Parmar

et al. 2024

Nano-Structures & Nano-Objects

View full text Add to dashboard Cite

Synthesis and investigation of structural and high temperature conduction mechanism of TiO 2 /N-GQDs nanocomposite thin films as a transparent conducting material

Kumar,

Azad,

Chand

2024

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This study includes the synthesis and characterization of N-GQDs, pure TiO2, and TiO2/N-GQDs nanocomposites thin films prepared by spin-coating technique. The gel of TiO2 nanoparticles and N-GQDs was prepared using sol-gel and hydrothermal techniques, respectively. Further, the TiO2/N-GQDs nanocomposites were prepared by sol-gel method in the weight % ratio of 90 TiO2/10 N-GQDs and 80 TiO2/20 N-GQDs. The structural, optical and electrical behaviour of these thin film has been investigated using XRD, AFM, HR-TEM, UV-Visible spectroscopy and two probe methods. The XRD study had confirmed the tetragonal structure of TiO2. The average crystallite size calculated using Debye-Scherrer’s equation has been found to be 13.56 nm for TiO2 which decreases up to 11.31 nm for 80 TiO2/20 N-GQDs. The HR-TEM analysis had confirmed the successful formation of N-GQDs having the average particle size about 8.63 nm. Further, the optical band gap was found to be 4.33 eV, 3.16 eV for N-GQDs, TiO2 which increases up to 3.88 eV for 80 TiO2/20 N-GQDs thin film. Also, it has been observed that the transparency of 80 TiO2/20 N-GQDs thin film was increased up to 84.2% in contrast to 75.6% of pure TiO2. Further, the temperature dependent I–V characteristics of prepared thin films within the temperature range of 293–513 K and voltage range of 0–60 V depicts the decreased resistivity up to 1.85 × 104 Ω-cm at 513 K from 3.35 × 104 Ω-cm at 293 K of 80 TiO2/20 N-GQDs thin film. Moreover, the increase in the transparency of 80 TiO2/20N-GQDs thin film and decreased resistivity up to 1.85 × 104 Ω-cm at 513 K suggests its utilization as a transparent and conducting electrode in optoelectronic devices.

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Synthesis and characterization of doped-ZnO thin films over wide temperature range for applications as a transparent conducting material

Cited by 2 publications

References 46 publications

Investigations on electrical and sensing behaviors of Fe doped ZnO nanoparticles

Investigations on electrical and sensing behaviors of Fe doped ZnO nanoparticles

Synthesis and investigation of structural and high temperature conduction mechanism of TiO 2 /N-GQDs nanocomposite thin films as a transparent conducting material

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