Synthesis and Characterization of Cu 2 S Thin Film Deposited by Chemical Bath Deposition Method

Patil, Madhuri; Sharma, Deepika; Dive, Avinash S.; Mahajan, Sandip; Sharma, Ramphal

doi:10.1016/j.promfg.2018.02.075

Cited by 15 publications

(10 citation statements)

References 4 publications

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“…In a study conducted by Mana et al, [ 40 ] the ZnS films produced by the SILAR method presented various bandgap values depending on the number of deposition cycles including, 3.62, 3.54, 3.52, and 3.5 eV. Patil et al, [ 49 ] found that the bandgap energy of pure Cu 2 S was 1.94 eV also deposited by chemical bath deposition.…”

Section: Resultsmentioning

confidence: 99%

In:SnO₂/Yb₂S₃:Cu₂S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode

et al. 2023

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Spin coating from a single source precursor is used to produce a transparent conductive electrode for a photoelectrochemical cell. Yb 2 S 3 :Cu 2 S:ZnS is discovered in the composite using X-ray diffraction analysis with a crystallite size of 44 nm. Energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy reveal that the composite comprises Yb, Cu, Zn, and S with an optical bandgap of 2.49 eV. Electrical investigations in a photoelectrochemical cell are measured using cyclic voltammetry, linear sweep voltammetry, transient chronoamperometry (CA), and electrical impedance spectroscopy (EIS). Every experiment shows that the photocurrent density of the electrode is higher than when it is in the light. At all scan rates, light causes the photoelectrode's specific capacitance to increase. Specific capacitance is found to have a maximum value under illumination of 789 Fg À1 as opposed to 745 Fg À1 in the absence of a light source. The highest photocurrent density achieved by the electrode through CA is 23.5 mA. R s value of 23.4 Ω is subsequently obtained by the EIS investigation. It might be stated that this work introduces a useful photoelectrode that can be used in renewable energy systems such as photovoltaics, supercapacitors, and photoelectrochemical solar cells.

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Section: Resultsmentioning

confidence: 99%

In:SnO₂/Yb₂S₃:Cu₂S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode

et al. 2023

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“…The obtained values are slightly different from the obtained values by Muhammed A.M. et al [52], which was prepared by Cu 2 S thin films of a different precursor (CuCl 2 ). 4.0x10 13 6.0x10 13 8.0x10 13 1.0x10 14 4.0x10 13 6.0x10 13 8.0x10 13 1.0x10 14 1.2x10 14 1.4x10 14 1.6x10 14 1.8x10 14…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Cu 2 S has crucial properties, such as non-toxicity, low cost [12], and an ideal bandgap. In addition, it plays an important role in various applications, including solar energy absorbers [13], electroconductive coatings [14], tabular solar collectors [15], ion batteries and superconductors [16,17], heterojunction photodetectors, such as Cu 2 S/CdS, ZnO/Cu 2 S, Cu 2 S/ZnS, and Cu 2 S/n-Si [18][19][20], and sensors [3]. Various deposition techniques are utilized for the synthetization of Cu 2 S thin films, such as vacuum evaporation [21], photochemical deposition [22], chemical bath deposition [15,23,24], sputtering [25], continuous flow microreactor [26,27], spray pyrolysis [28,29], and successive ionic layer adsorption and reaction technique (SILAR) [30,31].…”

Section: Introductionmentioning

confidence: 99%

“…The chemical bath deposition technique is one of the most popular techniques for the deposition of thin films due to its advantage over other deposition techniques, such as low cost, low pressure, ability to deposit large areas, and low-temperature requirement [15,32,33]. The properties of chemically deposited thin films strongly depend on the deposition parameters, such as deposition time [23], pH value [34,35], bath temperature [36], and substrate nature [13,33,37].…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Deposition Parameters on Morphological and Optical Properties of Cu2S Thin Films Grown by Chemical Bath Deposition Technique

Ahmed

Mohammed

2022

Photonics

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The chemical bath deposition technique has been used for the deposition of Cu2S thin films on glass substrates. The thickness of deposited thin films strongly depends on the deposition parameters. The present study revealed that the thickness increased from 185 to 281 nm as deposition time increased and from 183 to 291 nm as bath temperature increased. In addition, the thickness increased from 257 to 303 nm with the increment of precursors concentration and from 185 to 297 nm as the pH value increased. However, the thickness decreased from 299 to 234 nm with the increment of precursors concentration. The morphology of Cu2S thin films remarkably changed as the deposition parameters varied. The increase in deposition time, bath temperature, and CuSO4.5H2O concentration leads to the increase in particle sizes, homogeneity, compactness of the thin films, and the number of clusters, and agglomeration, while the increase in thiourea concentration leads to the decrease in particle sizes and quality of films. Optical results demonstrated that the transmission of thin films rapidly increased in the UV–VIS region at (λ = 350–500 nm) until it reached its maximum peak at (λ = 600–650 nm) in the visible region, then it decreased in the NIR region. The high absorption was obtained in the UV–VIS region at (λ = 350–500 nm) before it decreased to its minimum value in the visible region, and then increased in the NIR region. The energy bandgap of thin films effectively depends on the deposition parameters. It decreased with the increasing deposition time (3.01–2.95 eV), bath temperature (3.04–2.63 eV), CuSO4.5H2O concentration (3.1–2.6 eV), and pH value (3.14–2.75 eV), except for thiourea concentration, while it decreased with the increasing thiourea concentration (2.79–3.09 eV).

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“…Система Cu 2 S-In 2 S 3 -FeS образована бинарными соединениями, плавящимися конгруэнтно [1][2][3][4][5]. Соединение Cu 2 S существует в виде трех модификаций: до 376 К стабильна низкотемпературная модификация a-Cu 2 S; в интервале температур 376-708 К существует форма b-Cu 2 S гексагональной сингонии; выше 708 Кg-Cu 2 S с ГЦК структурой, плавится при 1402 К [6][7][8].…”

Section: Introductionunclassified

Liquidus surface of the quasi-ternary system Cu2S–In2S3–FeS

Bakhtiyarly

Kurbanova

Abdullaeva

et al. 2021

kcmf

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A projection of the liquidus surface of the quasi-ternary system Cu2S-In2S3-FeS was constructed as a result of experimental studies of quasi-binary and non-quasi-binary sections and based on the data on binary systems comprising a ternary system.Each section (six quasi-binary and four non-quasi-binary ones) was studied separately using complex methods of physicochemical analysis: differential thermal analysis, X-ray phase analysis, and microstructural analysis.It was found that the quasi-ternary system Cu2S-In2S3-FeS has six fields of primary crystallisation of separate phases and eleven monovariant equilibrium curves along which two phases are co-crystallised. Non-variant equilibrium points were obtained through the extrapolation of the direction of monovariant equilibrium curves.The quasi-ternary system Cu2S-In2S3-FeS is characterised by 17 non-variant equilibrium points, where Е1-Е5 are triple eutectic points.The projection diagram of the liquidus surface is characterised by three crystallisation fields of the initial componets (Cu2S, In2S3, FeS), four fields of binary compounds, and one field of a complex compound (CuFeIn3S6).Since complete solubility of the initial components in liquid and solid states is observed in the quasi-binary section CuIn5S8‑FeIn2S4, the fields of primary crystallisation of CuIn5S8 and FeIn2S4 are absent; they are replaced by an unlimited solid solution based on these components.The fields of primary crystallisation of Cu2S, FeS, and CuInS2 are the most extensive in the ternary system Cu2S-In2S3-FeS. The reactions occurring at monovariant equilibrium points are presented.

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Synthesis and Characterization of Cu 2 S Thin Film Deposited by Chemical Bath Deposition Method

Cited by 15 publications

References 4 publications

In:SnO₂/Yb₂S₃:Cu₂S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode

In:SnO₂/Yb₂S₃:Cu₂S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode

The Effect of Deposition Parameters on Morphological and Optical Properties of Cu2S Thin Films Grown by Chemical Bath Deposition Technique

Liquidus surface of the quasi-ternary system Cu2S–In2S3–FeS

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Synthesis and Characterization of Cu 2 S Thin Film Deposited by Chemical Bath Deposition Method

Cited by 15 publications

References 4 publications

In:SnO2/Yb2S3:Cu2S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode

In:SnO2/Yb2S3:Cu2S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode

The Effect of Deposition Parameters on Morphological and Optical Properties of Cu2S Thin Films Grown by Chemical Bath Deposition Technique

Liquidus surface of the quasi-ternary system Cu2S–In2S3–FeS

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In:SnO₂/Yb₂S₃:Cu₂S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode

In:SnO₂/Yb₂S₃:Cu₂S:ZnS: A Rare Earth Metal Sulfide‐Conjugated Transition Metal Sulfide Photoactive Electrode