Synthesis and characterization of carbon nitride thin films prepared by rf plasma enhanced chemical vapor deposition

Yu, GJ; Lee, S.-H.; Lee, D.-G.; Na, H.-D.; Park, H.-S.; Lee, J.-J.

doi:10.1016/s0257-8972(01)01700-5

Cited by 18 publications

(3 citation statements)

References 32 publications

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“…CN • or HCN) 51,52 . This is similar to the literature on plasma CVD of diamond 53 , carbon nanotubes 54 and carbon nitride 55 . Thus, the formation of volatile CN compounds could be a carbon sink explaining the high B/C ratios observed in our films compared to films deposited in Ar-TEB plasma.…”

Section: Please Do Not Adjust Marginssupporting

confidence: 90%

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Souqui¹,

Pališaitis²,

Högberg³

et al. 2020

Preprint

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<div> Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C2H5)3) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm3 as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements, varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition. </div>

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Section: Please Do Not Adjust Marginssupporting

confidence: 90%

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Souqui¹,

Pališaitis²,

Högberg³

et al. 2020

Preprint

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“…This seems counterintuitive, considering the initial B/C ratio of the precursor (0.17) and the lower B/C ratios of a-BxC films deposited from TEB-Ar plasma (up to 1.7 in MW discharge) 31 , but could be explained by the formation of CN radicals, which are known to be volatile from vapour phase deposition and etching in the C -N system. [357][358][359][360][361] Two kinds of morphology could be obtained: smooth films and nanowalls (NW). NW were the most common and their morphology varied with the deposition parameters.…”

Section: Contribution To Sp 2 -Bcxny Plasma Cvdmentioning

confidence: 99%

Chemical vapour deposition of sp2-hybridised B-C-N materials from organoborons

Souqui

2019

Linköping Studies in Science and Technology. Dissertations

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Up left: top view scanning electron micrograph (SEM) of sp 2 -BN grains and 3C-SiC grains on Si(111). Up right: top view SEM of r-BN grains on ZrB2, surrounded by a-BN. Bottom left: top view SEM of the surface of a 1.5 µm thick r-BN film deposited from TMB covered with a-BN. Bottom right: top view SEM of rhombohedral boron carbide grains on silicon carbide. Back side:Up: cross section SEM of DRAM structures of aspect ratio 60:1 (low magnification) and a-BxC film deep in the trenches (high magnification).Bottom, from left to right: top view SEM of sp 2 -BCxNy nanowalls deposited from plasma CVD, with increasing degree of disorder and complexity.During the course of research underlying this thesis, Laurent Souqui was enrolled in Agora Materiae, a multidisciplinary doctoral program at Linköping University, Sweden.

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“…Amorphous carbon nitride (CN x ) was deposited at lower than 473 K by RF plasmaenhanced CVD. 15) It was reported that, at a nitrogen concentration of approximately 20 at. % in films, deposition rate decreased with increasing substrate temperature.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature synthesis of carbon nitride by microwave plasma CVD

Tanaka

Sakamoto

2015

Jpn. J. Appl. Phys.

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Investigation of the low temperature synthesis of carbon nitride was carried out by microwave plasma CVD. Carbon nitride was synthesized using an improved microwave plasma CVD apparatus. Si was used as the substrate. A mixture of CH4 and N2 gas was used as a reaction gas. Synthesis pressure was varied from 1.1 to 4.0 kPa, microwave power was varied from 400 to 800 W. Faceted particles were obtained at a microwave power of 800 W and a substrate temperature of 880 K. Faceted particles were obtained at various synthesis pressures and a substrate temperature of as low as 740 K. Also, β-Si3N4 and α-C3N4 peaks were observed in the X-ray diffraction (XRD) pattern. As a result of studies of the low-temperature synthesis of carbon nitride by microwave plasma CVD, the morphology of deposits was found to depend on substrate temperature, and faceted particles were obtained at a substrate temperature as low as 740 K.

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Synthesis and characterization of carbon nitride thin films prepared by rf plasma enhanced chemical vapor deposition

Cited by 18 publications

References 32 publications

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Chemical vapour deposition of sp2-hybridised B-C-N materials from organoborons

Low-temperature synthesis of carbon nitride by microwave plasma CVD

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