Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials

Battiston, Simone; Fiameni, S.; Saleemi, Mohsin; Boldrini, Stefano; Famengo, A.; Agresti, F.; Stingaciu, Marian; Toprak, Muhammet S.; Fabrizio, M.; Barison, S.

doi:10.1007/s11664-013-2482-6

Cited by 73 publications

(26 citation statements)

References 15 publications

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“…20,21) Mg powder (Kojundo Chemical Laboratory Co., Ltd., 99.5% purity, <180 µm in size), Si powder (Wako Pure Chemical Industries, Ltd., 99.9% purity, through 150 µm 95% up in size) and Al powder (Hikari Material Industry Co., Ltd., 99.7% purity, <38 µm in size) were mixed in a molar ratio of Mg : Si : Al = 2 : 1 : 0.01. The powder mixtures were mechanically milled (MM) by using the planetary ball mill (Fritsch, P-6).…”

Section: Methodsmentioning

confidence: 99%

“…The electrical resistivity of Al 1 at% doped Mg 2 Si is about 1000 times larger than that of Mg metal. 20,21) So, it is expected that the sudden rise in resistance was caused by Mg 2 Si phase formation from a mixture of Mg and Si powders. In order to check the Mg 2 Si phase formation, powder compacts were heated in graphite and quartz dies up to 593 K and 653 K, which are just below and above the temperature when the resistance increase occurred, and then subjected to XRD analysis.…”

Section: Sintering Behavior Of Powders Mechanically Milledmentioning

confidence: 99%

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Synthesis of Thermoelectric Mg<sub>2</sub>Si by Reactive Sintering Utilizing Directly Applied Current Sintering

Ito

Kawahara

2015

Mater. Trans.

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Synthesis of the thermoelectric Mg 2 Si sintered body was tried by reactive pulsed current sintering (PCS) using graphite punches and a nonconductive quartz glass die (directly applied current sintering). The mechanically milled powder mixture of Mg and Si was heated by directly applied current sintering, the densification behavior, Mg 2 Si phase formation and the power consumption during sintering, and the relative density and the microstructure of the sample were compared to those of a sample sintered by the conventional PCS (using graphite punches and a graphite die). When the mechanically milled powders were heated by directly applied current sintering, the densification of a powder compact became larger during heating and the density of a sintered body was also significantly higher as compared to those of the sample sintered by the conventional PCS. The relative density of a compound sintered in a quartz die at 973 K for 10 min was 99.3%, which is almost the same as that of the sample sintered by the conventional PCS at 1073 K for 60 min, 99.6%. Furthermore, directly applied current sintering is found to accelerate the reaction between Mg and Si to form Mg 2 Si phase.

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Section: Methodsmentioning

confidence: 99%

Section: Sintering Behavior Of Powders Mechanically Milledmentioning

confidence: 99%

Synthesis of Thermoelectric Mg<sub>2</sub>Si by Reactive Sintering Utilizing Directly Applied Current Sintering

Ito

Kawahara

2015

Mater. Trans.

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“…The doping site of Al in Mg 2 Si is under debate, because the preferred doping site depends on doping concentration. Earlier study shows that the Al dopant should mainly occupy the Mg sites in the structure [9,10] In this paper we report a systematic study of electronic and thermoelectric properties of Al doped Mg 2 Si material based on first principles calculation using density functional pseudo potential method. The aim of this work was to show the n-type conduction and improvement of thermoelectric properties when this material doped with Al atom.…”

Section: Introductionmentioning

confidence: 99%

Electronic and Thermoelectric Properties of Al doped Mg2Si Material: DFT Study

Kaur

Kumar

2016

Materials Today: Proceedings

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“…The traditional n‐type dopants for magnesium silicide are Sb and Bi . Al has also been successfully incorporated as an n‐type dopant …”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Performance in Mg₂Si by Functionalized Co‐Doping

Mitra

Goyal

Rathore

et al. 2018

Physica Status Solidi (a)

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Mg2Si specimens doped with Bi, Al, and Se are synthesized via induction melting followed by rapid compaction using an induction assisted hot‐uniaxial press. Phase formation, dopant solubility, and microstructure are studied using X‐Ray diffraction and scanning electron microscopy. Results indicate the presence of the dopants to varying extent in the Mg2Si matrix, which is reflected in the lattice parameter and charge carrier concentration values. Temperature dependent thermoelectric properties are measured between room temperature and 673 K. Se is observed to enhance the density of states (DOS) effective mass (mnormalD*), while Al increased the carrier mobility (μ). Best thermoelectric performance are obtained for co‐doped Bi,Se and Bi,Al compositions with ≈20% increase in engineering figure of merit, ZTeng (ΔT = 350 K) compared to only Bi doped specimen. This enhancement can be explained from the observed electronic (increased mnormalD* due to Se incorporation) and microstructural (μ increase in Al containing compositions due to lower grain boundary magnesium oxide layer)characteristics of the specimens. Also, grain boundary accumulation (of Bi) is observed in Bi doped samples which results in a lowering of the lattice thermal conductivity, κnormalL.

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Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials

Cited by 73 publications

References 15 publications

Synthesis of Thermoelectric Mg<sub>2</sub>Si by Reactive Sintering Utilizing Directly Applied Current Sintering

Synthesis of Thermoelectric Mg<sub>2</sub>Si by Reactive Sintering Utilizing Directly Applied Current Sintering

Electronic and Thermoelectric Properties of Al doped Mg2Si Material: DFT Study

Enhanced Thermoelectric Performance in Mg₂Si by Functionalized Co‐Doping

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Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials

Cited by 73 publications

References 15 publications

Synthesis of Thermoelectric Mg<sub>2</sub>Si by Reactive Sintering Utilizing Directly Applied Current Sintering

Synthesis of Thermoelectric Mg<sub>2</sub>Si by Reactive Sintering Utilizing Directly Applied Current Sintering

Electronic and Thermoelectric Properties of Al doped Mg2Si Material: DFT Study

Enhanced Thermoelectric Performance in Mg2Si by Functionalized Co‐Doping

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Product

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Enhanced Thermoelectric Performance in Mg₂Si by Functionalized Co‐Doping