Synthesis and Characterization of a Zirconium (Zr) Thin Film on Si(100) via Pulsed Laser Deposition

Abstract

Zirconium (Zr) thin films were deposited on silicon using pulsed laser deposition (PLD) with two laser wavelengths (1064 nm and 532 nm) and varying substrate temperatures (25 °C, 300 °C, and 500 °C) and laser fluences (0.25, 0.5, 1.0 J/cm2). Results indicate that smoother films were obtained with 1064 nm and surface roughness increased with higher fluences. Optimal crystalline films were obtained at 300 °C. XRD, SEM, and AFM analysis revealed distinct patterns and peaks related to laser parameters. The growth mechanisms of a Zr film were computed based on a well-known continuum model of thin film growth. Our simulations agree with experimental observations. The study highlights crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films.

Fabrication and analysis of zirconium thin films on silicon (Si) by pulsed laser deposition

“…Computational outcomes show increasing coarseness in film texture with temperature, linked to accelerated mass transport on the surface [15]. At room temperature, diminutive islands with a 7 nm peak height appear.…”

“…Our research demonstrates that zirconium film's microstructure, surface properties, and crystallinity can be tailored using specific laser fluences and wavelengths [15] [our paper reference]. This study particularly focuses on how varying laser fluences affect the characteristics of zirconium films deposited using pulsed laser techniques.…”

“…In our experiments, we examined the impact of various deposition parameters on zirconium coating on Si (100) substrates using a 1064 nm Nd:YAG laser, focusing on the laser wavelength, fluence, and substrate temperature [15]. The findings indicate that PLD effectively produces crystalline zirconium under different conditions of substrate temperatures, fluences, and wavelengths.…”