2016
DOI: 10.1002/adfm.201505328
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Synthesis and Characterization of 2D Molybdenum Carbide (MXene)

Abstract: Large scale synthesis and delamination of 2D Mo 2 CT x (where T is a surface termination group) has been achieved by selectively etching gallium from the recently discovered nanolaminated, ternary transition metal carbide Mo 2 Ga 2 C. Different synthesis and delamination routes result in different fl ake morphologies. The resistivity of free-standing Mo 2 CT x fi lms increases by an order of magnitude as the temperature is reduced from 300 to 10 K, suggesting semiconductor-like behavior of this MXene, in contr… Show more

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Cited by 1,073 publications
(861 citation statements)
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References 55 publications
(88 reference statements)
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“…4m · E S R [9] where ESR ( ) is the equivalent series resistance of the system, determined from the initial voltage drop between the first two points at the beginning of the discharge curve. In the case where discharge comes immediately after charge by switching the current, it is determined by Equation 10.…”
Section: 45mentioning
confidence: 99%
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“…4m · E S R [9] where ESR ( ) is the equivalent series resistance of the system, determined from the initial voltage drop between the first two points at the beginning of the discharge curve. In the case where discharge comes immediately after charge by switching the current, it is determined by Equation 10.…”
Section: 45mentioning
confidence: 99%
“…2-D materials potentially have large electroactive surfaces and therefore attract research attention. MXenes are currently studied, both theoretically and experimentally, as potential electrode materials for energy storage devices such as batteries [6][7][8][9][10][11][12][13][14][15][16] and ECs 9,14,17-32 as well as other uses. …”
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confidence: 99%
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“…25 Furthermore, hot-filament chemical vapor deposition (HF-CVD) is one of the most promising techniques for 4 growing high melt point carbide materials at relatively low substrate temperature, such as WC, 26 M 3 C (M:Fe,Co,Ni), 27 silicon carbide (SiC) 28 and so on. In the HF-CVD processing, the filament was heated to over 2000 o C for activation of the source gas.…”
mentioning
confidence: 99%
“…The MAX phases, in turn, are a large ( > 70) family of layered ternary transition metal carbides, where M is an early transition metal, A is an A-group element (mostly groups 13 and 14), and X is C or/and N [16]. Because during etching, the A-group element layers such as Al and Ga are replaced by -O, -OH, and -F terminations [17,18], the proper designation of the resulting 2D material is Figure 1. (a) AFM scan of a Ti 3 C 2 T x monolayer on a 285 nm thick SiO 2 substrate.…”
Section: Introductionmentioning
confidence: 99%