Synthesis and characterization in AuCu–Si nanostructures

Novelo, T. E.; Amézaga-Madrid, P.; Maldonado, R. D.; Oliva, A.I.; Alonzo-Medina, G. M.

doi:10.1016/j.matchar.2015.01.010

Cited by 3 publications

(4 citation statements)

References 24 publications

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“…In a previous work, the study of physical and morphological properties of AuCu binary alloys was performed for the three different concentrations: 25 : 75, 50 : 50, and 75 : 25 at%. of Au : Cu alloy for a constant thickness at a temperature of 693 K [21]. However, in the diffraction pattern obtained for the 25 : 75 at% concentration, it presented the formation of composite materials (copper silences) other than the AuCu3 alloy.…”

Section: Journal Of Nanomaterialsmentioning

confidence: 89%

Surface Morphology and Electrical Resistivity in Polycrystalline Au/Cu/Si(100) System

Novelo

Alonzo-Medina

Amézaga-Madrid

et al. 2017

Journal of Nanomaterials

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This work describes the analysis of morphology and electrical resistivity (ρ) obtained in the Au/Cu/Si system. The Au/Cu bilayers were deposited by thermal evaporation technique with thicknesses from 50 to 250 nm on SiOx/Si(100) substrates. The Au : Cu concentration ratio of the samples was of 25 : 75 at%. The bilayers were annealed into a vacuum oven with argon atmosphere at 660 K for one hour. The crystalline structures of AuCu and CuSi alloys were confirmed by X-ray diffraction analysis. The scanning electron microscopy (SEM), the atomic force microscopy (AFM), and the energy dispersive spectroscopy (EDS) were used to study the morphology, final thickness, and the atomic concentration of the alloys formed, respectively. The four-point probe technique was used to measure the electrical resistivity (ρ) in the prepared alloys as a function of thickness. The ρ value was measured and it was numerically compared with the Fuchs–Sondheimer (FS) and the Mayadas–Shatzkes (MS) models of resistivity. Results show values of electrical resistivity between 0.9 and 1.9 μΩ-cm. These values are four times smaller than the values of the AuCu systems reported in literature.

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Section: Journal Of Nanomaterialsmentioning

confidence: 89%

Surface Morphology and Electrical Resistivity in Polycrystalline Au/Cu/Si(100) System

Novelo

Alonzo-Medina

Amézaga-Madrid

et al. 2017

Journal of Nanomaterials

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“…Following further directed diffusion, Au atoms could continue to diffuse into the structure of AuCu and/or AuCu 3 , forming Au 2 Cu 3 . 1 The Au : Cu atom ratio was about 2 : 3 based on analysis of the results of EDX in some regions of the Au/Cu mixed layer (the original Cu layer of the as-deposited sample). This also confirmed the existence of Au 2 Cu 3 .…”

Section: Intermetallic Oxidation and The Formation Of Voidsmentioning

confidence: 99%

“…The binary Au-Cu system has been applied to several fields of science, such as electronics, thin films, catalysis and nanocrystal materials. [1][2][3][4] For example, in electronic and micro/nanoelectromechanical systems (MEMS/NEMS), bilayers of Cu and metal or Cu and silicide deposited on a semiconductor have been widely employed due to their potential application for contacts and diffusion barriers. [5][6][7] In order to prevent the oxidation of Cu, an Au film is usually deposited on the Cu layer.…”

Section: Introductionmentioning

confidence: 99%

“…9 The phase diagram of the Au-Cu system is quite simple, because only three crystallographic structures (AuCu, Au 3 Cu, AuCu 3 ) are reported between about 200 1C and 410 1C. 1,10 In recent years, Au-Cu bimetallic nanoparticles with an alloy structure have been widely studied in catalysts, and have demonstrated a superior catalytic performance. 9,11,12 Numerous studies have concentrated on the investigation of the interdiffusion and structural properties of the Au-Cu systems during thermal annealing, and their mechanical characteristics.…”

Section: Introductionmentioning

confidence: 99%

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The formation of heterointerface defects in Au/Cu films on Si substrates under direct current in a vacuum ultraviolet environment

Kai

Yao

Yang

et al. 2016

Phys. Chem. Chem. Phys.

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Au/Cu metallic films were deposited on p-Si(100) substrates with and without an Au upper layer by magnetron sputtering. The defect formation and nanoscale interfacial evolution at the Au/Cu and Cu/Si interfaces were studied by using Auger electron spectroscopy (AES) and high resolution transmission electron microscopy (HRTEM). The results showed that an increase in defects at the heterointerfaces and in the surface layer was induced by the effect of a direct current (DC) in a vacuum ultraviolet (UV) environment, which could provide more channels for the removal of atoms. The directed migration of atomic clusters in the films was caused by the effect of the DC, which also aggravated the defects' expansion and led to the formation of Au-Cu intermetallic compounds (IMCs). In addition, the voids formed at the interface between the Au/Cu films and the Si substrates were found to be mainly related to the generation of the material Au2Cu3.

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First-principles study on the lattice vibration, anisotropy, tensile strength and electronic properties of CuxHfySiz intermetallics

Li,

Zhang,

Wang

2023

Chemical Physics Letters

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Synthesis and characterization in AuCu–Si nanostructures

Cited by 3 publications

References 24 publications

Surface Morphology and Electrical Resistivity in Polycrystalline Au/Cu/Si(100) System

Surface Morphology and Electrical Resistivity in Polycrystalline Au/Cu/Si(100) System

The formation of heterointerface defects in Au/Cu films on Si substrates under direct current in a vacuum ultraviolet environment

First-principles study on the lattice vibration, anisotropy, tensile strength and electronic properties of CuxHfySiz intermetallics

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