2010
DOI: 10.1016/j.jallcom.2010.07.201
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Synthesis and cathodoluminescence of In2O3–SnO2 nanowires heterostructures

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Cited by 12 publications
(6 citation statements)
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“…The lower binding energy component (O I ) was associated with oxygen in the oxide crystal, whereas the higher binding energy component (O II ) represented the oxygen ions in the oxygen-deficient regions. Oxygen vacancies usually form in oxide nanostructures manufactured using thermal evaporation in an oxygen-deficient environment [22]. The oxygen vacancy content in the crystalline In-Sn-O nanostructures was defined as an intensity ratio: O II /(O I  + O II ).…”
Section: Resultsmentioning
confidence: 99%
“…The lower binding energy component (O I ) was associated with oxygen in the oxide crystal, whereas the higher binding energy component (O II ) represented the oxygen ions in the oxygen-deficient regions. Oxygen vacancies usually form in oxide nanostructures manufactured using thermal evaporation in an oxygen-deficient environment [22]. The oxygen vacancy content in the crystalline In-Sn-O nanostructures was defined as an intensity ratio: O II /(O I  + O II ).…”
Section: Resultsmentioning
confidence: 99%
“…As is well known, one-dimensional (1D) semiconductor-based heterostructures possess better physical and chemical properties than the homostructures because these heterostructures can modulate the intrinsic properties of the materials [1][2][3][4][5][6]. For example, depositing noble metals on the surface of semiconductors can facilitate electrons transferring out conduction band of the semiconductors after irradiation, thus further enhance photocatalytic, photosensing and photodetective properties [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…Indium oxide (In 2 O 3 ), an important n-type semiconductor, has been extensively studied due to its advantageous features, such as significant large energy band gap (3.5-3.75 eV) [1], high electrical conductivity [2], excellent luminescence [3,4], and high optical transparency [5]. Accordingly, it has a wide range of practical applications, including optoelectronic devices [6], solar cells [7], field effect transistors [8], electric-double-layer transistors [9], Fabry-Perot resonators [10], thin-film transistors [11], bio sensors, and gas sensors.…”
Section: Introductionmentioning
confidence: 99%