Synthesis and Atomic Force Microscopy Contact Current Images of Aluminum Doped ZnO Thin Films

Abstract

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

Determination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy

“…1. As was mentioned above, for the characterization of this nano-contact the conductive AFM method in contact mode [8][9][10][11][12][13][14] was used. The used tip was the SCM-PIT model (BRUKER) which has a nominal spring constant of k n = 2.8 N/m and has a metallic coating of Platinum-Iridium of 20 nm thickness.…”

“…On the other hand, it is well known that Atomic Force Microscopy (AFM) is an important tool in the nanotechnology as for example in the investigation of electrical properties by means of Scanning Tunneling Microscopy or the conductive AFM technique [5][6][7]. The conductive Atomic Force Microscopy (C-AFM) technique has been widely used to measure the surface electrical current of different materials such as conductors, semiconductors, dielectric or even biological materials [8][9][10][11][12][13][14]. Werner Frammelsberger et al [8] reported electrical measurements of SiO 2 thin films using C-AFM technique.…”

“…Miłosz Grodzicki et al [12] reported C-AFM measurements of Shottky barriers on metal-semiconductor heterostructures. N. Muñoz-Aguirre et al [13] has shown images of the surface of ZnO thin films by means of C-AFM and recently Fanny Hauquier et al [14] reported electrical properties of graphene sheets. Specially attention is directed to the Schottky barrier conformed by the conductor-semiconductor union [15][16][17][18][19][20][21] since in the C-AFM technique a tip coated by a metal alloy of P t − Ir is principally used.…”

“…Young et al [20] applied the Pd/ZnO Schottky barrier as an ultraviolet photodetector and C. Weichsel et al [21] developed Pd/ZnO Schottky diodes for hydrogen gas sensing. It is important to mention that the Modern Atomic Force Microscopes have relevant advantages since can measure spectroscopic I-V characteristics at different points of the sample surface [13]. In relation to the last mentioned reports, few authors detail the procedure in order to obtain their electrical characterizations by means of C-AFM.…”