2007
DOI: 10.1016/j.jssc.2006.09.014
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Syntheses, crystal and electronic structure, and some optical and transport properties of LnCuOTe (Ln=La, Ce, Nd)

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Cited by 61 publications
(50 citation statements)
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References 45 publications
(61 reference statements)
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“…Although Cu 2 ZnSnS 4 is a normal semiconductor exhibiting a thermally activated behavior for σ, the strong thermal activation is largely removed by Cu-doping. Selenide samples show a metallic behavior in analogy to the reported trend for LaCuOQ (Q = S, Se, Te): the sulfide and selenide are semiconductive, and the telluride is metallic [47]. A flat σ(T ) has also been observed in LnCuOTe (Ln = La, Ce, Nd) [47] and is indicative of the metallic behavior with a relatively short mean free path limited by defect/impurity scattering rather than phonon scattering.…”
Section: −X Zn X S Thin Films For the Buffer Layersupporting
confidence: 58%
See 1 more Smart Citation
“…Although Cu 2 ZnSnS 4 is a normal semiconductor exhibiting a thermally activated behavior for σ, the strong thermal activation is largely removed by Cu-doping. Selenide samples show a metallic behavior in analogy to the reported trend for LaCuOQ (Q = S, Se, Te): the sulfide and selenide are semiconductive, and the telluride is metallic [47]. A flat σ(T ) has also been observed in LnCuOTe (Ln = La, Ce, Nd) [47] and is indicative of the metallic behavior with a relatively short mean free path limited by defect/impurity scattering rather than phonon scattering.…”
Section: −X Zn X S Thin Films For the Buffer Layersupporting
confidence: 58%
“…A flat σ(T ) has also been observed in LnCuOTe (Ln = La, Ce, Nd) [47] and is indicative of the metallic behavior with a relatively short mean free path limited by defect/impurity scattering rather than phonon scattering. These features are all consistent with the interpretation that hole conductivity comes from the hybridization of Cu 3d with Q np (Q np = S 3p, Se 4p, Te 5p) near the VBM [47].…”
Section: −X Zn X S Thin Films For the Buffer Layermentioning
confidence: 80%
“…the main structural unit for the superconducting performance, thus significantly influencing the superconducting behavior. Similarly, in the p-type transparent conducting material LnCuOTe (Ln = La, Ce, Nd) 12 and BaCuQF (Q = S, Se), 13 the hole conduction is realized via the covalent Cu 2 Q 2 layers, which form the valence band maximum, whereas the large band gap and the high transparent quality are maintained through the ionic Ln 2 O 2 or Ba 2 F 2 layers confining the Cu−S bonds in the CuS layers.…”
Section: ■ Introductionmentioning
confidence: 99%
“…S1(c) in the Supporting Information 35 ) and that do not contribute to transport. [18][19][20] . This is a highly desirable feature in the band structure to realize a p-type transparent conducting material.…”
Section: C4 Intrinsic Hole Content In the γ Phasementioning
confidence: 99%
“…17 O 30 . Here, we propose the first intrinsic hole transparent conductor in a layered oxide-sulfide, specifically La 5 Cu 6 O 4 S 7 , [18][19][20][21][22] having, in addition, a new mechanism based on remarkable deviations from the standard Peierls dimerization expected in regular one dimensional systems. This compound was observed 18 to have the layered structure shown in Figure 1(b).…”
Section: Introductionmentioning
confidence: 99%