2016
DOI: 10.1016/j.jssc.2016.03.026
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Syntheses and structural characterization of non-centrosymmetric Na2M2M'S6 (M, M′=Ga, In, Si, Ge, Sn, Zn, Cd) sulfides

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Cited by 37 publications
(31 citation statements)
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“…Further details on the crystal structure investigations may be obtained from the Fachinformationszentrum Karlsruhe, 76344 Eggenstein-Leopoldshafen, Germany, on quoting the depository numbers CSD-2018860 for RbGaGeS 4 (1), CSD-2018859 for RbGaGeSe 4 (2), CSD-2018866 for TlGaGeS 4 (3), CSD-2018863 for TlGaGeSe 4 -oP56 (4), CSD-2018857 for CsGaGeS 4 -oP56 (5), CSD-2018862 for CsGaGeSe 4 (6), CSD-2018854 for CsGaSnS 4 -oP56 (7), CSD-2018855 for KGaGeSe 4 (8), CSD-2018869 for TlGaSnS 4 -mP56 (9), CSD-2018867 for TlGaSnSe 4 -mP56 (10), CSD-2018861 for TlGaGeSe 4 -mC112 (11), CSD-2018853 for CsGaGeS 4 -mP28 (12), CSD-2018852 for CsGaGeS 4 -aP28 (13), CSD-2018856 for KGaSnSe 4 -cP84 (14), CSD-2018858 for RbGaSnSe 4 -cP84 (15), CSD-2018865 for TlGaSnS 4 -cP84 ( 16), CSD-2018868 for TlGaSnSe 4 -cP84 (17), and CSD-2018864 for CsGaSnS 4 -cP84 (18). All compounds presented in this work have mixed occupation of the Ga 3+ and M 4+ cations on all respective sites.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Further details on the crystal structure investigations may be obtained from the Fachinformationszentrum Karlsruhe, 76344 Eggenstein-Leopoldshafen, Germany, on quoting the depository numbers CSD-2018860 for RbGaGeS 4 (1), CSD-2018859 for RbGaGeSe 4 (2), CSD-2018866 for TlGaGeS 4 (3), CSD-2018863 for TlGaGeSe 4 -oP56 (4), CSD-2018857 for CsGaGeS 4 -oP56 (5), CSD-2018862 for CsGaGeSe 4 (6), CSD-2018854 for CsGaSnS 4 -oP56 (7), CSD-2018855 for KGaGeSe 4 (8), CSD-2018869 for TlGaSnS 4 -mP56 (9), CSD-2018867 for TlGaSnSe 4 -mP56 (10), CSD-2018861 for TlGaGeSe 4 -mC112 (11), CSD-2018853 for CsGaGeS 4 -mP28 (12), CSD-2018852 for CsGaGeS 4 -aP28 (13), CSD-2018856 for KGaSnSe 4 -cP84 (14), CSD-2018858 for RbGaSnSe 4 -cP84 (15), CSD-2018865 for TlGaSnS 4 -cP84 ( 16), CSD-2018868 for TlGaSnSe 4 -cP84 (17), and CSD-2018864 for CsGaSnS 4 -cP84 (18). All compounds presented in this work have mixed occupation of the Ga 3+ and M 4+ cations on all respective sites.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The substitution of In for Ga results in a series of compounds Li 2 In 2 Si(Ge)S 6 (Se 6 ) that crystallize in a monoclinic structure, space group Cc [8,9]. Isostructural sodium-containing compounds Na 2 In 2 Si(Ge)S 6 (Se 6 ) and Na 2 CdGe 2 S 6 (Se 6 ) have also been reported [10][11][12][13]. It has been found that Na 2 Ga 2 GeS 6 crystallizes in the orthorhombic structure (space group Fdd2), while Na 2 In 2 SiS 6 and Na 2 In 2 GeS 6 have monoclinic structures (space group Cc).…”
Section: Introductionmentioning
confidence: 99%
“…For example, KInSnS 4 , K 2x Mn x Sn 3-x S 6 (x = 0.5-0.95), H 3 O 8 ]respectively, with mobile potassium and protons in the interlayer region. [1][2][3][4][5] These low-dimensional structural frameworks endow them with the property of facile exchange of potassium ions and protons by a variety of mono-, di-and tri-valent cations at room temperature in aqueous medium. This ion-exchange property has potential significance [6] in the disposal of nuclear waste containing radioactive 137 Cs, 90 Sr, etc.…”
Section: Introductionmentioning
confidence: 99%
“…This ion-exchange property has potential significance [6] in the disposal of nuclear waste containing radioactive 137 Cs, 90 Sr, etc. K 3 Sb 3 P 2 O 14 ·3H 2 O and KSbP 2 O 8 are the layered compound precursors [7][8][9] that undergo ion-exchange reactions [4,5] with HNO 3 at room temperature to give rise to the corresponding H 3 8 , undergoes ion-exchange of potassium ions with molten nitrates of other alkali metal ions [1,2,5] , at high temperatures of~400 8C. Their ion-exchange capabilities at room temperature in aqueous medium are largely unexplored and the ion-exchange reaction of K 3 Sb 3 P 2 O 14 ·3H 2 O with aqueous Cu 2 + ions was the only example reported.…”
Section: Introductionmentioning
confidence: 99%