2020
DOI: 10.1016/j.apsusc.2019.144697
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Synergistic enhancing photoelectrochemical response of Bi10O6S9 with WO3 optical heterojunction in wide wavelength range

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Cited by 9 publications
(6 citation statements)
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“…S10 b with equivalent circuit in inset. The series resistance (R s ) mainly reflects electrical contacts, wires, and sheet resistance of the electrodes [43,53]. The charge-transfer resistance (R tr ) means the charge-transfer property at the interface, and R rec means the recombination of carriers [43,54].…”
Section: Resultsmentioning
confidence: 99%
“…S10 b with equivalent circuit in inset. The series resistance (R s ) mainly reflects electrical contacts, wires, and sheet resistance of the electrodes [43,53]. The charge-transfer resistance (R tr ) means the charge-transfer property at the interface, and R rec means the recombination of carriers [43,54].…”
Section: Resultsmentioning
confidence: 99%
“…Meanwhile, it can be found that WO 3 tablets and Bi 10 O 6 S 9 nanosheets also form a WB heterojunction as shown in Figure d. It can be seen from Figure e,f, which are enlarged diagrams of the framed part in Figure d, the lattice spacing of WO 3 is 0.376 nm, corresponding to the (020) crystal plane, and that of Bi 10 O 6 S 9 is 0.323 nm. , Figure g–k shows the EDX mapping images of the Bi 10 O 6 S 9 /BP sample, which demonstrates the existence of P, Bi, O, and S elements. The layer of Bi 10 O 6 S 9 is small and its crystallinity is poor, so the interfacial structure of Bi 10 O 6 S 9 and WO 3 is not observed and only the phase can be determined.…”
Section: Resultsmentioning
confidence: 86%
“…The Fermi level of Ag is 0.4 eV . The CB, VB, and Fermi level of n-Si are −0.44, 0.66, and −0.25 eV, respectively, those of WO 3 are 0.35, 3.31, and 0.75 eV, respectively, those of Bi 10 O 6 S 9 are 0.33, 1.71, and 0.96 eV, respectively, and those of BP are −0.23, 0.48, and 0.36 eV, respectively . The band gaps of Si, WO 3 , Bi 10 O 6 S 9 , and BP are 1.1, 2.96, 1.38, and 0.71 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…When creating photoelectrodes based on advanced semiconductor materials for photoelectrochemical cells, it is necessary to take into account a number of factors that affect the efficiency of water splitting. Among these factors are the optical properties of nanomaterials, their electronic structure, and the catalytic properties for activating the evolution of hydrogen and oxygen in aqueous solutions [4][5][6][7]. In the formation of hybrid/nanocomposite and hetero/multilayer structures, these factors affect the generation and transfer of non-equilibrium charge carriers (photogenerated electrons/holes) in semiconductors, the lifetime of these carriers, and the efficiency of catalytically activated processes of water splitting [8][9][10].…”
Section: Introductionmentioning
confidence: 99%