Synergistic effects of extrinsic photoconduction and photogating in a short-wavelength ZrS₃ infrared photodetector

Abstract

Two-dimensional (2D) material-based photodetectors, especially those working in the infrared band, have shown great application potential in thermal imaging, optical communication, and medicine fields. Designing 2D material photodetectors with broadened...

Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors

“…For a typical photogating effect in a pure MoS 2 device, long carrier lifetimes result in substantial gains but slower response times. 44 In comparison to a pure MoS 2 device, the phototransistor based on V-doped MoS 2 exhibits a significantly improved response speed by 3 orders of magnitude, reaching 3 ms. This enhancement may be attributed to the sensitivity of the response time in atomically thin MoS 2 to the states of defects.…”

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…S18, ESI†). 60,61 In addition, the dependence of the photocurrent on light power density has been fitted by the power law. Under various illuminations, the fitting factors are all far less than 1 (0.39–0.66, Fig.…”

Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors

“…The excess photogenerated electrons in GeSe may circulate several times before recombining with the holes, which leads to an enhanced photoconductive gain in the device. Recently, Yu et al have reported a similar photogating effect due to natural oxidation in ZrS 3 -based IR photodetectors . Intuitively, a capping layer of hBN or Al 2 O 3 could truncate the process of oxidation in GeSe, but the self-assembled GeO x /GeSe heterostructure imparts a broadband detection capability to the device, without jeopardizing the detection capability of the pristine GeSe layer underneath.…”

“…Recently, Yu et al have reported a similar photogating effect due to natural oxidation in ZrS 3 -based IR photodetectors. 39 Intuitively, a capping layer of hBN or Al 2 O 3 could truncate the process of oxidation in GeSe, but the self-assembled GeO x /GeSe heterostructure imparts a broadband detection capability to the device, without jeopardizing the detection capability of the pristine GeSe layer underneath. It is worth mentioning that most of the existing reports on GeSe photodetectors and phototransistors focus on eliminating or overlooking the defect states and oxidation in GeSe, and thus, little consideration has been devoted toward harnessing their inherent capabilities in optical devices.…”