Synergistic effects assessment between nuclear damage and electronic energy dissipation in LiTaO3 under heavy ion irradiation using optical waveguides properties and the irradiation angle of incidence

Tormo-Márquez, Victoria; Crespillo, Miguel L.; Olivares, J.

doi:10.1016/j.nimb.2021.04.015

Cited by 2 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, novel optical structures, such as waveguides, where the refractive index values can be tailored "ad-hoc" within the modified region, and reinforcement of the plasmon-phonon coupling, can be generated using ion beam technology. [10,11] Additionally, swift heavy ion-induced lattice defects in crystals act as color centers and enhance the luminescence quantum efficiency. [12] Therefore, the modification of micro-/nanostructures is crucial to control the electronic and optical properties in the modern technology of continuous miniaturization of devices, generating a boom in ion-track research and motivating numerous valuable applications.…”

Section: Introductionmentioning

confidence: 99%

Structural Damage and Recrystallization Response of Garnet Crystals to Intense Electronic Excitation

Han

Zarkadoula

Crespillo

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

The susceptibility to irradiation-induced damage, the fundamental mechanism of the relaxation kinetics, and the corresponding recrystallization effect related to the cation radius ratio are comprehensively investigated for Y 3 Al 5 O 12 and Gd 3 Ga 5 O 12 garnet crystals under 645 MeV Xe 35+ irradiation with different fluences of 5 × 10 11 -3 × 10 12 ions cm −2 . Regarding different lattice distortion and swelling levels, the observed microstructure transformations to disordered and amorphous phases, and corresponding hillock dimensions, consistently confirm that Gd 3 Ga 5 O 12 has a higher susceptibility to radiation damage than Y 3 Al 5 O 12 . Combined with iTS model calculations, although Y 3 Al 5 O 12 has higher atomic temperature and energy deposition than Gd 3 Ga 5 O 12 under the same ion velocity and electronic energy loss, the relatively high thermal conductivity and specific heat coefficient of Y 3 Al 5 O 12 crystals enhance the conduction and dissipation of deposition energy, and Gd 3 Ga 5 O 12 , with a higher cation-radius-ratio (r A /r B ), is more easily damaged to amorphous phase due to the less favorable kinetics of ordering and recovery of a melted track region to the crystalline phase. Additionally, the significant bandgap modification in spectral ranges of 5.88-6.75 eV for Y 3 Al 5 O 12 and 4.83-5.41 eV for Gd 3 Ga 5 O 12 , and the enhancement of defect-assisted-related luminescence are achieved, providing a basis to design novel optoelectronic devices in microelectronics fields.

show abstract

Section: Introductionmentioning

confidence: 99%