Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots

Abstract

biocompatibility, and excellent optoelectronic properties such as convenient emission tunability, high stability, and color purity. Among them, cadmiumbased (Cd-based) [1,2] and lead-based (Pb-based) [5,11] QDs have been studied a lot and much progress has been obtained over the past few decades. However, their toxicity limits further application in many fields. Indium phosphide (InP) QDs with wide emission range and no toxicity are promising alternative emitting material, rapidly acquiring extensive research, but it is still a great challenge to obtain highquality InP QDs. [15][16][17][18] To date, considerable research has focused on growth kinetics and synthetic strategies of InP QDs. [19][20][21][22][23][24][25] Apart from the common method where indium acetate and tris(trimethylsilyl)phosphine ((TMS) 3 P) are utilized, indium halide is widely employed in the preparation of InP/ ZnS QDs combining with zinc halide and amino phosphine recently owing to its low cost and safety. As has been reported, halide plays a critical role in its nucleation and surface chemistry. Hens et al. [26] reported the synthesis of InP/ZnS QDs with green and red emission tuning by halogen ions owing to their different steric hindrance effects. Considering the slow surface reaction rates of iodideThe ORCID identification number(s) for the author(s) of this article can be found under

Performance Evaluation of Solid State Luminescent Solar Concentrators Based on InP/ZnS-Rhodamine 101 Hybrid Inorganic–Organic Luminophores

“…Bare InP QDs typically have poor luminescent properties such as broad spectral features, and low PLQEs, attributed to deep electronic trap states associated with dangling bonds at the surface. − Passivation of these trap states is commonly achieved with an overcoating of a large bandgap semiconductor with minimal lattice mismatch . ZnS has a large bandgap of 3.6 eV and a lattice mismatch of 7.6% with the same cubic zinc blende phase as InP . Based on the size distributions analyzed from scanning transmission electron microscopy (STEM) imaging (Figure a), the size of the InP/ZnS QDs was 4.7 ± 0.6 nm.…”

“…The excitation spectrum of Rhod 101 emission in the hybrid system shows distinct InP/ZnS character, concluding that energy transfer is occurring. Binding between InP/ZnS-Rhod 101 is suggested by a red shift in the excitation maximum of Rhod 101 by ∼10 nm. − Native oleylamine (OAm) ligands on the surface of InP/ZnS induce a local polarity change relative to the bulk solvent (chloroform) in which they are dispersed. The observed ∼10 nm shift of Rhod 101 is attributed to its presence within this local polar field.…”

“…54 ZnS has a large bandgap of 3.6 eV and a lattice mismatch of 7.6% with the same cubic zinc blende phase as InP. 55 Based on the size distributions analyzed from scanning transmission electron microscopy (STEM) imaging (Figure 2a), the size of the InP/ ZnS QDs was 4.7 ± 0.6 nm. Approximately three monolayers of ZnS were added to the initial InP cores (the monolayer size of zinc blende ZnS was estimated as 0.25 nm).…”

Zinc Carboxylate Surface Passivation for Enhanced Optical Properties of In(Zn)P Colloidal Quantum Dots

“…Not only bounded to enhancement in photoluminescence properties of the core, but the zinc carboxylate also seems to possess a size-controlling ability of the QD core through interaction with phosphine precursor. The conventional (TMS) 3 P precursor is widely used in the synthesis of the III-V quantum dot, due to its extreme reactivity that would induce rapid and homogeneous nucleation, while its nature leads to instant depletion of (TMS) 3 P in the solution, inhibiting the diffusion-controlled growth processes [ 26 , 27 ], which is indispensable for the synthesis of monodisperse CQDs. However, under the presence of a zinc complex, the zinc complex creates a zinc-phosphine complex which would function as a continuous phosphine reservoir that would enable monodisperse growth through the diffusional growth mechanism [ 33 ].…”

“…These trap states result in non-radiative recombination and deteriorates the optical properties of the III-V QD [ 20 , 21 , 22 , 23 ]. Various methods such as metal doping (Cu, Ag, Mn) and halogenic ions have been used to prevent formation of surface trap states, including the further shell passivation process [ 24 , 25 , 26 ].…”