(2 of 15)through grain boundaries (GBs) and penetrate the charge transport layer and thus corrode the metal electrode. [12] Especially, halide ion migration-induced electrode corrosion in inverted PSCs is more serious because the aggregation and poor filmforming performance of the PCBM lead to the lack of barrier effect of the thin films on ion migration. [13] Furthermore, the metal typically evaporated at high temperatures, which may damage the organic fullerene and thus form interfacial defects. [14] The above issues could result in adverse exciton dissociation at the cathode interface. [15] Thus, overcoming the interface issues and simultaneously improving the performance and stability is urgently necessary for the development of inverted PSCs. Interface modification strategies are a promising way to overcome interface issues. Many materials have been introduced to inverted PSCs to enhance the interface energy matching, anti-corrosion as well as surface hydrophobicity, such as metal oxide (Al 2 O 3 , [16] TiO 2 , [17] ZnO [18] ) bismuth layer, [19] organometallic carbon long derivative, [20] some organic materials (polyethylenimine ethoxylated [PEIE], [21] poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt2,7-(9,9-dioctylfluorene)], [22] Bathocuproine [BCP], [3b] Rhodamine [23] ) [24] and some salts (LiF [25] ). Looking at the existing interface materials in inverted PSCs, there are still challenges in using the same material to achieve multiple interface functions to enhance the performance and stability of the devices, such as the improvement of corrosion resistance of the electrode has a negative impact on the efficient charge transfer of the cathode interface, [11,26] so it is necessary to balance the anti-corrosion performance and the performance of the device. In addition, the disadvantage of harsh preparation conditions and hygroscopic properties of them will increase the cost of the preparation and threaten the device stability.Up to now, the most promising way to overcome the above problem based on an inverted device structure is using evaporated BCP inserting between perovskite/fullerene heterojunction and metal cathodes. [27] That strategy pushes the performance of inverted devices to a high of 25%, which is comparable with that of regular n-i-p devices. [27] The excellent performance of the evaporated BCP cathode interface is ascribed to the high quality of the evaporated film and the suitable electrical property of BCP. [28] The extremely dense and uniform film can form high-quality interface contact and could act as a physical barrier layer to prevent the ions migration, which enhances the performance and stability of the devices. [28] Although the performance of the inverted PSCs has been dramatically enhanced by evaporated BCP electron transport layer, the cathode interface layer prepared by the solution method is desired by the industry at the time of promoting the industrialization of PSCs. [29] Unfortunately, the solution-processed BCP shows poor film formation because of its eas...