“…In order to overcome these issues and to push the limit of MoSe 2 for future applications, promising strategies enabling control of conductivity, carrier type, and carrier density are needed. Some of the approaches are alloying, doping, functionalization, heterostructure formation, phase engineering, etc. − Among them, substitutional doping of the heteroatom is considered as an effective strategy to tune the intrinsic properties, e.g., carrier concentration, Fermi level, band structure, optoelectronic properties, and catalytic behavior of the host material. , However, a controlled way to homogeneously dope in the atomically thin layers is a significant challenge. Most of the previously reported methods adapted for the substitutional doping in TMDC, e.g., chemical vapor deposition (CVD)-based synthesis methods, are not suitable for energy storage applications due to small size (micron scale) limitations and high production cost of the materials. − Regarding the choice of doping element, manganese (Mn) can be advantageous, as it is a nonprecious metal (in contrast to platinum group metals), earth-abundant, and environmentally friendly, and it also exhibits multivalent oxidation states that can boost the redox process in the case of a supercapacitor application.…”