Synergic effects of Sn4+ doping on the nonlinear optical limiting properties of SnxCd1-xMoO4 nanostructures for optoelectronic applications

Binish, B.; Rahulan, K. Mani

doi:10.1016/j.jphotochem.2023.114614

Cited by 10 publications

(1 citation statement)

References 43 publications

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“…Therefore, it is desired that the limiting threshold of an optical limiting material be as low as possible for protecting eyes and detectors. Among the nonlinear optical materials, metal MoO 4 and WO 4 materials such as Sn 4+ doped BaMoO 4 [11], Cr 3+ doped La 2 (WO 4 ) 3 [12], PbMoO 4 [26], and Sn 4+ doped CdMoO 4 [47] showed that they have good NA properties and low optical limiting thresholds.…”

Section: Introductionmentioning

confidence: 99%

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Doğan,

Karatay,

Isik

et al. 2024

Phys. Scr.

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Nonlinear absorption properties of PbMo0.75W0.25O4 single crystal fabricated by the Czochralski method were studied. The band gap energy of the crystal was determined as 3.12 eV. Urbach energy which represents the defect states inside the band gap was found to be 0.106 eV. PbMo0.75W0.25O4 single crystal has a broad photoluminescence emission band between 376 and 700 nm, with the highest emission intensity occurring at 486 nm and the lowest intensity peak at 547 nm, depending on the defect states. Femtosecond transient absorption measurements reveal that the lifetime of localized defect states is found to be higher than the 4 ns pulse duration. Open aperture (OA) Z-scan results demonstrate that the PbMo0.75W0.25O4 crystal exhibits nonlinear absorption (NA) that includes simultaneous two-photon absorption (TPA) as the dominant mechanism at the 532 nm excitations corresponding to 2.32 eV energy. NA coefficient (βeff) increased from 7.24 x 10-10 m/W to 8.81 x 10-10 m/W with increasing pump intensity. At higher intensities βeff tends to decrease with intensity increase. This decrease is an indication that saturable absorption (SA) occurred along with the TPA, called saturation of TPA. The lifetime of the defect states was measured by femtosecond transient absorption spectroscopy. Saturable absorption behavior was observed due to the long lifetime of the localized defect states. Closed aperture (CA) Z-scan trace shows the sign of a nonlinear refractive index. The optical limiting threshold of PbMo0.75W0.25O4 single crystal at the lowest intensity was determined as 3.45 mJ/cm2. Results show that the PbMo0.75W0.25O4 single crystal can be a suitable semiconductor material for optical limiting applications in the visible region.

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Section: Introductionmentioning

confidence: 99%

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Doğan,

Karatay,

Isik

et al. 2024

Phys. Scr.

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show abstract

Structural characteristics and enhanced two-photon absorption behavior of Pb-doped ZnMoO4 nanostructures for optoelectronic device applications

Jayasree,

Flower,

Sujatha

et al. 2024

Appl. Phys. A

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Optical characterization of NaBi(MoO4)2 crystal by spectroscopic ellipsometry

Guler,

Isik,

Gasanly

2024

Appl. Phys. A

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Synergic effects of Sn4+ doping on the nonlinear optical limiting properties of SnxCd1-xMoO4 nanostructures for optoelectronic applications

Cited by 10 publications

References 43 publications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Structural characteristics and enhanced two-photon absorption behavior of Pb-doped ZnMoO4 nanostructures for optoelectronic device applications

Optical characterization of NaBi(MoO4)2 crystal by spectroscopic ellipsometry

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Synergic effects of Sn4+ doping on the nonlinear optical limiting properties of SnxCd1-xMoO4 nanostructures for optoelectronic applications

Cited by 10 publications

References 43 publications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo0.75W0.25O4 single crystal for optical limiting applications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo0.75W0.25O4 single crystal for optical limiting applications

Structural characteristics and enhanced two-photon absorption behavior of Pb-doped ZnMoO4 nanostructures for optoelectronic device applications

Optical characterization of NaBi(MoO4)2 crystal by spectroscopic ellipsometry

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Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications