Synergetic Enhancement of Light-Matter Interaction by Nonlocality and Band Degeneracy in ZnO Thin Films

Kinoshita, Takashi; Matsuda, Toyonori; Takahashi, Tōru; Ichimiya, Masayoshi; Ashida, Masaaki; Furukawa, Yusuke; Nakayama, Masaaki; Ishihara, Hajime

doi:10.1103/physrevlett.122.157401

Cited by 6 publications

(4 citation statements)

References 32 publications

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“…The 2D sheet structure with the thickness of 3 nm adjacent to exciton Bohr radius reduces the polar of excitons and contributes to the coupling among excitons through Coulomb interactions assumably predicting that the 2D nanosheet has near degeneracy in the top valence bands due to its thickness fluctuation. [20] As for the coherent oscillation in Figure 4d, the 3D colorful fill surface of the dynamic trace with the 3D wall profile at 298.8 W cm À2 is displayed (Figure 5a), and the peak emission intensity of GaN of 367 nm and AlGaN of 340 nm is much lower than that of ZnO of 376 nm. The SF of ZnO with an oscillation is clearly observed (the 3D wall profile, Figure 5a).…”

Section: Pl Analysis and Discussionmentioning

confidence: 89%

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Observation of Superfluorescence of ZnO Nanosheets

Ding,

Zeng,

Liang

et al. 2023

Physica Status Solidi (b)

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ZnO nanostructures are attractive candidates as source media for realizing opto‐electronic devices. Compared with morphology images and mixing color images between cathodoluminescence images and SEM morphology images of ZnO nanosheets, the emission of ZnO nanosheet is emitted from its flat surface. In time‐resolved photoluminescence, the sharp emission pulse is observed after the delay time τ D of 56 ps relative to the zero time at the threshold excitation power, the pulse peak intensity exhibits the superlinear increase proportional to P2.7– (P is the excitation power density), the reduction of τ D is proportional to In (P) /P, the oscillation is demonstrated in the decay trace at high excitation power, and the time interval of two oscillation emissions is 36 ps. Experimental results indicate that superfluorescence (SF) is demonstrated at room temperature and assigned to coherent dipole states in population version localized to approximately 3 nm thick ZnO nanosheet. SF of coherent dipole states is characterized by the delay time τ D — the unique feature of SF and the Burnham‐Chiao ringing behavior. Experimental observations of SF of ZnO nanosheets may have potential values for the investigation of room temperature many‐body quantum phenomena, coherent control and applications for high‐performance opto‐electronic devices.This article is protected by copyright. All rights reserved.

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Section: Pl Analysis and Discussionmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Observation of Superfluorescence of ZnO Nanosheets

Ding,

Zeng,

Liang

et al. 2023

Physica Status Solidi (b)

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“…[36][37][38] Through surface/interface engineering, it is believed that ZnO NW emission devices could be optimized through light-matter interaction modulation for tailoring the optical process. [33,[39][40][41] Here, light confinement modulation was realized based on ZnO NWs through interface engineering end facets through introducing Pt metal, optimized UV spontaneous and lasing emission was realized, supporting an effective optical path through interface engineering for photon extraction, thus a larger internal gain was realized for enhanced spontaneous and lasing emissions. As proven by experimental results, through interface integration with Pt metal for ZnO NWs, 170% photoluminescence (PL) emission enhancement accompanied by 145% broaden emission spectra width (FWHM) in the UV region was obtained.…”

Section: Introductionmentioning

confidence: 78%

“…[ 36–38 ] Through surface/interface engineering, it is believed that ZnO NW emission devices could be optimized through light‐matter interaction modulation for tailoring the optical process. [ 33,39–41 ]…”

Section: Introductionmentioning

confidence: 99%

Enhanced Ultraviolet Spontaneous and Lasing Emission Through Interface Engineering of Patterned Vertically Aligned ZnO Nanowires

Guo

Zhao

et al. 2022

Adv Materials Inter

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Among the most studied nanomaterials, 1D nanowires (NWs) with ultra-high intrinsic photoelectric gain, multiple array light confinement, and subwavelength size effects could be suitable for designing structures with advanced performance, which fully satisfy the practical needs. [9][10][11][12] Due to the small size and self-formed cavity, semiconductor NWs have attracted more and more attention to fabricating nanostructured lasers, [13] which could provide natural cavities for low size lasers. [15][16][17][18] Among all the low dimensional materials, ZnO is considered to be a promising candidate as a UV media considering its wide bandgap (3.37 eV) and large exciton binding energy of 60 meV, which is suitable for fabricating room temperature optoelectronic devices. [19][20][21] Compared with GaN (25 meV), the large exciton binding energy of ZnO material enables to achieve room temperature optoelectronic devices with high stability. At present, optically pumped UV lasing action in ZnO was realized as the gain medium with single forms such as microwires, microspheres, nanoribbons, nanowires, etc. [22][23][24][25] and the preparation methods could be thermal oxidation, chemical vapor deposition (CVD), hydrothermal reaction, magnetron sputtering, atomic layer deposition (ALD), pulsed laser Due to optical radiation losses, a high pumping threshold or low temperature is necessary for driving ultraviolet (UV) light emission devices, and surface/interface engineering method is one of the alternatives for tailoring photon behavior. Here, a fully integrated nanowire (NW) laser device is thus constructed, resulting in suppressed interface light loss. Enhanced UV spontaneous and lasing emission is observed due to adequate gain to compensate for the optical loss. Applying well-aligned ZnO NW cavities, optimized UV spontaneous and lasing emission is realized, supporting an effective optical path through interface engineering for photon extraction. As proven by experimental results, through interface integration with Pt metal for ZnO NWs, 170% photoluminescence (PL) emission enhancement accompanied by 145% broaden emission spectra width in the UV region is obtained. It is also observed that more lasing modes appeare when excitation density is high enough, lasing modes interspacing of around 3 nm, and full width at half maximum of the modes <0.003 eV for the lasing device could be observed. The detailed optical simulation is proposed to understand the physical origin of internal mechanisms contributing to the optimized spontaneous and stimulated lasing emission behaviors.

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