Synchrotron studies of functional interfaces and the state of the art: A perspective

Abstract

The dramatic improvements in synchrotron light sources across the world imply tremendous opportunities for interface science. In this Perspective, we describe a variety of current scattering and spectroscopic techniques with an eye toward how these will evolve, particularly with the advent of diffraction-limited sources. We also note the importance of in situ and operando methods for both understanding interface creation and interface evolution in different environments. As interfaces are often where critical processes occur, whether in regard to energy/chemical/materials/quantum information science, understanding the utility of these x-ray techniques will be of considerable importance to the cultivation of next-generation scientists.

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

“…High intensity synchrotron x-rays with photon energies above 20 keV can penetrate through the thick reactor walls required to shield high temperature and low pressure growth processes in purpose-built XRD-compatible synthesis chambers. This has been demonstrated for several synthesis approaches relevant for SiC [67] (figure 2(a)), including in a growth reactor for nitride CVD [91]. While the phase space of nitride CVD differs from that of SiC both in terms of the chemistry and relevant growth temperatures ( 1200 • C), work on GaN [91][92][93][94] serves as a proof-of-concept framework for future in situ studies of SiC growth.…”

“…The conditions required to synthesize SiC, namely temperatures in excess of ∼ 1400 • C for CVD and 2000 • C for PVT [21], are the most significant barrier precluding the direct characterization of relevant thermodynamic and kinetic factors. Fortunately, novel synthesis reactor designs compatible with high energy synchrotron x-ray characterization (E > 20 keV) have been developed and used to probe various surface processes in real time [67]. These in situ x-ray capabilities have yet to be applied to SiC synthesis but have the potential to revolutionize our understanding of polytype control.…”

Highly sensitive 2D X-ray absorption spectroscopy via physics informed machine learning

“…Check for updates Zeyuan Li 1,2 , Thomas Flynn 3 , Tongchao Liu 4 , Sizhan Liu 5 , Wah-Keat Lee 1 , Ming Tang 2 & Mingyuan Ge 1 Improving the spatial and spectral resolution of 2D X-ray near-edge absorption structure (XANES) has been a decade-long pursuit to probe local chemical reactions at the nanoscale. However, the poor signal-to-noise ratio in the measured images poses significant challenges in quantitative analysis, especially when the element of interest is at a low concentration.…”

Spin- and time-resolved photoelectron spectroscopy and diffraction studies using time-of-flight momentum microscopes

“…5 In situ and operando methods are important for understanding interface creation and interface evolution in different environments. 6 Related to this new class of ARPES experiments is the electronic response on mechanical strain as visible in the stunning changes of the electronic structure in twisted graphene. 7 Observation of XPD dates back to the pioneering work of Siegbahn et al 8 and Fadley and co-workers.…”